ZVN3310F：N 通道 ≥100V
| Part Number | Data Sheet | SPICE Model | Qualified to AECQ10x | PPAP Capable | Polarity | ESD Diodes (Y/N) | VDS (V) | VGS (±V) | IDS @TA = +25°C (A) | IDS @TC = +25°C (A) | PD @TA = +25°C (W) | PD @TC = +25°C (W) | RDS(ON)Max @ VGS(10V) (mΩ) | RDS(ON)Max @ VGS(4.5V) (mΩ) | RDS(ON)Max @ VGS(2.5V) (mΩ) | VGS (th) Max (V) | CISS Typ (pF) | CISS Condition [@VDS] (V) | QG Typ@ VGS = 10V(nC) | QG Typ @ VGS = 4.5V(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| ZVN3310F | ZVN3310F.pdf | ZVN3310F | Yes | Yes | N | No | 100 | 20 | 0.1 | - | 0.33 | - | 10000 | - | - | 2.4 | - | - | - | - |
Description
This MOSFET utilises a structure that combines low input capacitance with relatively low on-resistance and has an intrinsically higher pulse current handling capability in linear mode than a comparable trench technology structure. This MOSFET is suitable for general purpose applications. Complementary Type – ZVP3310F
Application
- General purpose 100V FET
- Power management
- Disconnect switches
- Telecoms
订购型号
- ZVN3310FTA
SOT23
- ZVN3310F.pdf ZVN3310F
