ZVP4525G：P 通道 ≥ 100V
| Part Number | Data Sheet | SPICE Model | Qualified to AECQ10x | PPAP Capable | Polarity | ESD Diodes (Y/N) | VDS (V) | VGS (±V) | IDS @TA = +25°C (A) | PD @TA = +25°C (W) | RDS(ON)Max @ VGS(10V) (mΩ) | RDS(ON)Max @ VGS(4.5V) (mΩ) | RDS(ON)Max @ VGS(2.5V) (mΩ) | RDS(ON)Max @ VGS(1.8V) (mΩ) | VGS (th) Max (V) | CISS Typ (pF) | CISS Condition [@VDS] (V) | QG Typ@ VGS = 10V(nC) | QG Typ @ VGS = 4.5V(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| ZVP4525G | ZVP4525G.pdf | ZVP4525G | Yes | Yes | P | No | 250 | 40 | 0.265 | 2 | 14000 | - | 18000 | - | 2 | - | - | 2.45 | - |
Description
This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of telecom and general high voltage circuits.
Application
- Earth recall and dialling switches
- Electronic hook switches
- High voltage power MOSFET drivers
- Telecom call routers
- Solid state relays
订购型号
- ZVP4525GTA
SOT223
- ZVP4525G.pdf ZVP4525G
