ZXMHC6A07N8：H 桥 MOSFET
| Part Number | Data Sheet | SPICE Model | Qualified to AECQ10x | PPAP Capable | Type | ESD Diodes (Y/N) | VDS (V) | VGS (±V) | IDSA +25ºC (A) | PDW +25ºC (W) | RDS(ON)Max @ VGS(10V) (mΩ) | RDS(ON)Max @ VGS(4.5V) (mΩ) | CISS Typ (pF) | QG Typ@ VGS = 10V(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| ZXMHC6A07N8 | ZXMHC6A07N8.pdf | ZXMHC6A07N8 | Yes | Yes | 2 x N 2 x P | No | 60 | 20 | 1.4 1.8 | 1.3 | 250 400 | 350 600 | - | 3.2 5.1 |
Description
This new generation complementary MOSFET H-Bridge features low on-resistance achievable with low gate drive.
Application
- DC Motor control
- DC-AC Inverters
订购型号
- ZXMHC6A07N8TC
SO-8
- ZXMHC6A07N8.pdf ZXMHC6A07N8
