Part Number | Data Sheet | SPICE Model | Qualified to AECQ10x | PPAP Capable | Polarity | ESD Diodes (Y/N) | VDS (V) | VGS (±V) | IDS @TA = +25°C (A) | PD @TA = +25°C (W) | RDS(ON)Max @ VGS(10V) (mΩ) | RDS(ON)Max @ VGS(4.5V) (mΩ) | RDS(ON)Max @ VGS(2.5V) (mΩ) | RDS(ON)Max @ VGS(1.8V) (mΩ) | VGS(th) Min.(V) | VGS (th) Max (V) | CISS Typ (pF) | CISS Condition [@VDS] (V) | QG Typ@ VGS = 10V(nC) | QG Typ @ VGS = 4.5V(nC) |
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ZXMN2F30FHQ | ZXMN2F30FHQ.pdf | ZXMN2F30FHQ | Yes | Yes | N | No | 20 | 12 | 4.9 | 1.4 | - | 45 | 65 | - | 0.6 | 1.5 | 452 | 10 | - | 4.8 |
This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AECQ101 and supported by a PPAP.