ZXMP2120G4：P 通道 ≥ 100V
| Part Number | Data Sheet | SPICE Model | Qualified to AECQ10x | PPAP Capable | Polarity | ESD Diodes (Y/N) | VDS (V) | VGS (±V) | IDS @TA = +25°C (A) | PD @TA = +25°C (W) | RDS(ON)Max @ VGS(10V) (mΩ) | RDS(ON)Max @ VGS(4.5V) (mΩ) | RDS(ON)Max @ VGS(2.5V) (mΩ) | RDS(ON)Max @ VGS(1.8V) (mΩ) | VGS (th) Max (V) | CISS Typ (pF) | CISS Condition [@VDS] (V) | QG Typ@ VGS = 10V(nC) | QG Typ @ VGS = 4.5V(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| ZXMP2120G4 | ZXMP2120G4.pdf | ZXMP2120G4 | Yes | No | P | No | 200 | 20 | 0.2 | 2 | 25000 | - | - | - | 3.5 | - | - | - | - |
Description
This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of telecom and general high voltage circuits.
Application
- Active clamping of primary side MOSFETs in 48 volt DC-DC converters
订购型号
- ZXMP2120G4TA
SOT223
- ZXMP2120G4.pdf ZXMP2120G4
