The BFP840FESD is a high performance HBT (Heterojunction Bipolar Transistor) specifically designed for 5-6 GHz WiFi applications. The device is based upon the reliable high volume SiGe:C technology of Infineon. The BFP840FESD provides inherently good input and output power match as well as inherently good noise match at 5-6 GHz. The simultaneous noise and power match without lossy external matching components at the input leads to a low external parts count, to a very good noise figure and to a very high transducer gain in the WiFi application. Integrated protection elements at in- and output make the device robust against ESD and excessive RF input power. The device offers its high performance at low current and voltage and is especially well-suited for portable batterypowered applications in which energy efficiency is a key requirement. The device comes in an easy to use thin flat package with visible leads.
As Low Noise Amplifier (LNA) in
As discrete active mixer, amplifier in VCOs and buffer amplifier
Title | Size | Date | Version |
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BFP840FESD,EN | 1.4 MB | 03 四月 2013 | 01_02 |
Title | Size | Date | Version |
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AN289 | 496 KB | 19 十一月 2012 | 02_00 |
AN289 面向5-6 GHz无线局域网设备、采用可减少组件数量的 BFP840FESD的低噪放大器;CN | 1.1 MB | 17 五月 2013 | 02_00 |
AN299 - LNA for 5 to 6 GHz WLAN incl . 2.4GHz rejection with BFP840FESD | 809 KB | 20 二月 2013 | 01_00 |
AN320 - BFP840FESD High Gain Low Noise Amplifier using BFP840FESD for 2.4 - 2.5 GHz WLAN Application | 670 KB | 17 六月 2013 | 01_00 |
Title | Size | Date | Version |
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Infineon-RF-Transistors-8th-Generation-PB-v01_00-CN;CN | 362 KB | 25 四月 2016 | 01_00 |
Infineon-RF-Transistors-8thGeneration-PB-v01_00-EN;EN | 289 KB | 01 四月 2016 | 01_00 |
Title | Size | Date | Version |
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Next-Generation RF Transistors with Advanced Technology Boost Receiver | 251 KB | 02 四月 2013 | |
Technical Report TR1129: BFP840FESD Low Noise Amplifier for 3.4GHz - 3.8GHz (Band 42/43) | 1 MB | 17 六月 2013 | 01_01 |
Title | Size | Date | Version |
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MCDS_2016-05-18_16-23-18_MA000993432_PG-TSFP-4-1;EN | 27 KB | 18 五月 2016 | 01_00 |
MCDS_2013-08-29_13-54-56_MA000993432_PG-TSFP-4-1.pdf | 23 KB | 31 十月 2013 | 01_00 |
Title | Size | Date | Version |
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PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Altium - v1.0 | 1 MB | 22 十月 2013 | 01_00 |
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Cadence - v1.0 | 139 KB | 22 十月 2013 | 01_00 |
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Eagle - v1.0 | 27 KB | 22 十月 2013 | 01_00 |
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Mentor - v1.0 | 176 KB | 22 十月 2013 | 01_00 |
Board | Family | Description | Status |
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BFP640ESD BOARD | Ultra Low Noise SiGe:C Transistors for use up to 12 GHz | The BFP640ESD is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board. | on request |
BFP740 BOARD | Ultra Low Noise SiGe:C Transistors for use up to 12 GHz | The BFP740 is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board. | on request |
BFP740ESD BOARD | Ultra Low Noise SiGe:C Transistors for use up to 12 GHz | The BFP740ESD is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board. | on request |
BFP740FESD BOARD | Ultra Low Noise SiGe:C Transistors for use up to 12 GHz | The BFP740FESD is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board. | on request |
BFP840ESD BOARD | Ultra Low Noise SiGe:C Transistors for use up to 12 GHz | The BFP840ESD is a hetero-junction bipolar transistor specifically designed for 5 GHz LNA applications.Please refer to an application note or a technical report when you order the evaluation board. | on request |
BOARD BFP840FESD | Ultra Low Noise SiGe:C Transistors for use up to 12 GHz | The BFP840FESD is a hetero-junction bipolar transistor specifically designed for 5 GHz LNA applications.Please refer to an application note or a technical report when you order the evaluation board. | on request |
BFP842ESD BOARD | Ultra Low Noise SiGe:C Transistors for use up to 12 GHz | The BFP842ESD is a hetero-junction bipolar transistor specifically designed for 2.3 - 3.5 GHz LNA applications. Please refer to an application note or a technical report when you order the evaluation board. | on request |
BFP843 BOARD | Ultra Low Noise SiGe:C Transistors for use up to 12 GHz | The BFP843 is a robust low noise broadband pre-matched bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board. | |
BFR840L3RHESD BOARD | Ultra Low Noise SiGe:C Transistors for use up to 12 GHz | The BFR840L3RHESD is a hetero-junction bipolar transistor specifically designed for 5 GHz LNA applications.Please refer to an application note or a technical report when you order the evaluation board. | on request |
BFR843EL3 BOARD | Ultra Low Noise SiGe:C Transistors for use up to 12 GHz | The BFR843EL3 is a robust low noise broadband pre-matched bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board. | on request |
BFP640 BOARD | Ultra Low Noise SiGe:C Transistors for use up to 12 GHz | The BFP640 is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board. | on request |
Title | Size | Date | Version |
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Infineon-RFTransistor-AWR-MWO-Design-Kit-SM-v02_00-EN;EN | 21.4 MB | 11 十二月 2015 | 02_00 |
Infineon-RFtransistor-Keysight-ADS-Design-Kit-SM-v02_00-EN;EN | 940 KB | 26 十月 2015 | 02_00 |
Title | Size | Date | Version |
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BFP840FESD | 608 KB | 15 六月 2012 |
Title | Size | Date | Version |
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PG-TSFP-4-1 | BFP840FESDH6327XTSA1;EN | 491 KB | 11 四月 2016 | 01_00 |
Title | Size | Date | Version |
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PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Altium - v1.0 | 1 MB | 22 十月 2013 | 01_00 |
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Cadence - v1.0 | 139 KB | 22 十月 2013 | 01_00 |
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Eagle - v1.0 | 27 KB | 22 十月 2013 | 01_00 |
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Mentor - v1.0 | 176 KB | 22 十月 2013 | 01_00 |