BFP840FESD

The BFP840FESD is a high performance HBT (Heterojunction Bipolar Transistor) specifically designed for 5-6 GHz WiFi applications. The device is based upon the reliable high volume SiGe:C technology of Infineon. The BFP840FESD provides inherently good input and output power match as well as inherently good noise match at 5-6 GHz. The simultaneous noise and power match without lossy external matching components at the input leads to a low external parts count, to a very good noise figure and to a very high transducer gain in the WiFi application. Integrated protection elements at in- and output make the device robust against ESD and excessive RF input power. The device offers its high performance at low current and voltage and is especially well-suited for portable batterypowered applications in which energy efficiency is a key requirement. The device comes in an easy to use thin flat package with visible leads.

As Low Noise Amplifier (LNA) in

As discrete active mixer, amplifier in VCOs and buffer amplifier

ParametricBFP840FESD
VCEO  max2.25V
IC  max35.0mA
NF0.55dB
Gmax27.5dB
OIP321.0dBm
OP1dB4.5dBm
Sales Product NameBFP840FESD
OPNBFP840FESDH6327XTSA1
Product Statusactive and preferred
Package NamePG-TSFP-4
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size3000
Packing TypeTAPE & REEL
Summary of Features:
  • Robust high performance low noise amplifier based on Infineon´s reliable, high volume SiGe:C wafer technology
  • 2 kV ESD robustness (HBM) due to integrated protection circuits
  • High maximum RF input power of 21 dBm
  • 0.6 dB minimum noise figure typical at 2.4 GHz, 0.8 dB at 5.5 GHz, 6 mA
  • 26 dB maximum gain (Gma, Gms) typical at 2.4 GHz, 20.5 dB at 5.5 GHz, 25 mA
  • 23.5 dBm OIP3 typical at 5.5 GHz, 25 mA
  • Accurate SPICE GP model available to enable effective design in process (see chapter 6)
  • Thin, small, flat, Pb- and halogen free (RoHS compliant) package with visible leads
Target Applications:
  • Mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n, WiMax 2.5/3.5/5 GHz, UWB, Bluetooth
  • Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and C-band LNB
  • Multimedia applications such as mobile/portable TV, CATV, FM Radio
  • 3G/4G UMTS/LTE mobile phone applications
  • ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications
Data Sheet
TitleSizeDateVersion
BFP840FESD,EN1.4 MB03 Apr 201301_02
Application Notes
TitleSizeDateVersion
AN289496 KB19 Nov 201202_00
AN289 面向5-6 GHz无线局域网设备、采用可减少组件数量的 BFP840FESD的低噪放大器CN1.1 MB17 May 201302_00
AN299 - LNA for 5 to 6 GHz WLAN incl . 2.4GHz rejection with BFP840FESD809 KB20 Feb 201301_00
AN320 - BFP840FESD High Gain Low Noise Amplifier using BFP840FESD for 2.4 - 2.5 GHz WLAN Application670 KB17 Jun 201301_00
Product Brief
TitleSizeDateVersion
Infineon-RF-Transistors-8th-Generation-PB-v01_00-CNCN362 KB25 Apr 201601_00
Infineon-RF-Transistors-8thGeneration-PB-v01_00-ENEN289 KB01 Apr 201601_00
Article
TitleSizeDateVersion
Next-Generation RF Transistors with Advanced Technology Boost Receiver251 KB02 Apr 2013
Technical Report TR1129: BFP840FESD Low Noise Amplifier for 3.4GHz - 3.8GHz (Band 42/43)1 MB17 Jun 201301_01
Material Content SheetInfo
TitleSizeDateVersion
MCDS_2016-05-18_16-23-18_MA000993432_PG-TSFP-4-1EN27 KB18 May 201601_00
MCDS_2013-08-29_13-54-56_MA000993432_PG-TSFP-4-1.pdf23 KB31 Oct 201301_00
PCB Design Data
TitleSizeDateVersion
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Altium - v1.01 MB22 Oct 201301_00
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Cadence - v1.0139 KB22 Oct 201301_00
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Eagle - v1.027 KB22 Oct 201301_00
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Mentor - v1.0176 KB22 Oct 201301_00
Evaluation Boards
BoardFamilyDescriptionStatus
BFP640ESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP640ESD is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP740 BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP740 is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP740ESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP740ESD is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP740FESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP740FESD is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP840ESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP840ESD is a hetero-junction bipolar transistor specifically designed for 5 GHz LNA applications.Please refer to an application note or a technical report when you order the evaluation board.on request
BOARD BFP840FESDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP840FESD is a hetero-junction bipolar transistor specifically designed for 5 GHz LNA applications.Please refer to an application note or a technical report when you order the evaluation board.on request
BFP842ESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP842ESD is a hetero-junction bipolar transistor specifically designed for 2.3 - 3.5 GHz LNA applications. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP843 BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP843 is a robust low noise broadband pre-matched bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.
BFR840L3RHESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFR840L3RHESD is a hetero-junction bipolar transistor specifically designed for 5 GHz LNA applications.Please refer to an application note or a technical report when you order the evaluation board.on request
BFR843EL3 BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFR843EL3 is a robust low noise broadband pre-matched bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP640 BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP640 is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
Simulation Models
TitleSizeDateVersion
Infineon-RFTransistor-AWR-MWO-Design-Kit-SM-v02_00-ENEN21.4 MB11 Dec 201502_00
Infineon-RFtransistor-Keysight-ADS-Design-Kit-SM-v02_00-ENEN940 KB26 Oct 201502_00
Simulation Data
TitleSizeDateVersion
BFP840FESD608 KB15 Jun 2012
Package Data
TitleSizeDateVersion
PG-TSFP-4-1 | BFP840FESDH6327XTSA1EN491 KB11 Apr 201601_00
PCB Design Data
TitleSizeDateVersion
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Altium - v1.01 MB22 Oct 201301_00
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Cadence - v1.0139 KB22 Oct 201301_00
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Eagle - v1.027 KB22 Oct 201301_00
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Mentor - v1.0176 KB22 Oct 201301_00
EN BFP840FESD
AN289 BFP840FESD
CN BFP840FESD
AN299 - LNA for 5 to 6 GHz WLAN incl . 2.4GHz rejection with BFP840FESD BFP840FESD
AN320 - BFP840FESD High Gain Low Noise Amplifier using BFP840FESD for 2.4 - 2.5 GHz WLAN Application BFP840FESD
CN BFR840L3RHESD
EN BFR840L3RHESD
Next-Generation RF Transistors with Advanced Technology Boost Receiver BFR840L3RHESD
Technical Report TR1129: BFP840FESD Low Noise Amplifier for 3.4GHz - 3.8GHz (Band 42/43) BFP840FESD
EN BFP840FESD
MCDS_2013-08-29_13-54-56_MA000993432_PG-TSFP-4-1.pdf BFP840FESD
EN BFQ790
EN BFP780
BFP840FESD BFP840FESD
EN BFP840FESD
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Altium - v1.0 BFR740L3RH
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Cadence - v1.0 BFR740L3RH
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Eagle - v1.0 BFR740L3RH
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Mentor - v1.0 BFR740L3RH