The BFP842ESD is a high performance HBT (Heterojunction Bipolar Transistor) specifically designed for 2.3 - 3.5 GHz LNA applications. The device is based upon the reliable high volume SiGe:C technology of Infineon. The BFP842ESD provides inherently good input power match as well as inherently good noise match between 2.3 and 3.5 GHz. The simultaneous noise and power match without lossy external matching components at the input leads to a low external parts count, to a very good noise figure and to a high transducer gain in the application. Integrated protection elements at in- and output make the device robust against ESD and excessive RF input power. The device offers its high performance at low current and voltage and is especially well-suited for portable batterypowered applications in which energy efficiency is a key requirement. The device comes in an easy to use industry standard package with visible leads.
As very low noise amplifier (LNA) in:
As discrete active mixer, buffer amplifier in VCOs
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BFP842ESD,EN | 1.3 MB | 11 四月 2013 | 01_01 |
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AN322: BFP842ESD SiGe:C Ultra Low Noise RF Transistor in Low Parts Count 2.4 – 2.5 GHz WLAN LNA Application | 845 KB | 18 六月 2013 | 01_00 |
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Infineon-RF-Transistors-8th-Generation-PB-v01_00-CN;CN | 362 KB | 25 四月 2016 | 01_00 |
Infineon-RF-Transistors-8thGeneration-PB-v01_00-EN;EN | 289 KB | 01 四月 2016 | 01_00 |
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MCDS_2013-08-29_12-47-09_MA000967034_PG-SOT343-4-2.pdf | 23 KB | 31 十月 2013 | 01_00 |
Title | Size | Date | Version |
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PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Altium - v1.0 | 1 MB | 22 十月 2013 | 01_00 |
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Cadence - v1.0 | 139 KB | 22 十月 2013 | 01_00 |
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Eagle - v1.0 | 27 KB | 22 十月 2013 | 01_00 |
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Mentor - v1.0 | 176 KB | 22 十月 2013 | 01_00 |
PCB Footprints & Symbols - BFP842ESD - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - MWO - v2.0.zip;EN | 242 KB | 07 一月 2015 | 02_00 |
Board | Family | Description | Status |
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BFP640ESD BOARD | Ultra Low Noise SiGe:C Transistors for use up to 12 GHz | The BFP640ESD is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board. | on request |
BFP740 BOARD | Ultra Low Noise SiGe:C Transistors for use up to 12 GHz | The BFP740 is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board. | on request |
BFP740ESD BOARD | Ultra Low Noise SiGe:C Transistors for use up to 12 GHz | The BFP740ESD is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board. | on request |
BFP740FESD BOARD | Ultra Low Noise SiGe:C Transistors for use up to 12 GHz | The BFP740FESD is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board. | on request |
BFP840ESD BOARD | Ultra Low Noise SiGe:C Transistors for use up to 12 GHz | The BFP840ESD is a hetero-junction bipolar transistor specifically designed for 5 GHz LNA applications.Please refer to an application note or a technical report when you order the evaluation board. | on request |
BOARD BFP840FESD | Ultra Low Noise SiGe:C Transistors for use up to 12 GHz | The BFP840FESD is a hetero-junction bipolar transistor specifically designed for 5 GHz LNA applications.Please refer to an application note or a technical report when you order the evaluation board. | on request |
BFP842ESD BOARD | Ultra Low Noise SiGe:C Transistors for use up to 12 GHz | The BFP842ESD is a hetero-junction bipolar transistor specifically designed for 2.3 - 3.5 GHz LNA applications. Please refer to an application note or a technical report when you order the evaluation board. | on request |
BFP843 BOARD | Ultra Low Noise SiGe:C Transistors for use up to 12 GHz | The BFP843 is a robust low noise broadband pre-matched bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board. | |
BFR840L3RHESD BOARD | Ultra Low Noise SiGe:C Transistors for use up to 12 GHz | The BFR840L3RHESD is a hetero-junction bipolar transistor specifically designed for 5 GHz LNA applications.Please refer to an application note or a technical report when you order the evaluation board. | on request |
BFR843EL3 BOARD | Ultra Low Noise SiGe:C Transistors for use up to 12 GHz | The BFR843EL3 is a robust low noise broadband pre-matched bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board. | on request |
BFP640 BOARD | Ultra Low Noise SiGe:C Transistors for use up to 12 GHz | The BFP640 is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board. | on request |
Title | Size | Date | Version |
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Infineon-AN322-BFP842ESD-AWR-MWO-Apllication-Example-SM-v01_00-EN;EN | 169 KB | 26 十月 2015 | 01_00 |
Infineon-RFtransistor-Keysight-ADS-Design-Kit-SM-v02_00-EN;EN | 940 KB | 26 十月 2015 | 02_00 |
Infineon-RFTransistor-AWR-MWO-Design-Kit-SM-v02_00-EN;EN | 21.4 MB | 11 十二月 2015 | 02_00 |
Title | Size | Date | Version |
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BFP842ESD | 426 KB | 27 八月 2012 |
Title | Size | Date | Version |
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PG-SOT343-4-2 | BFP842ESDH6327XTSA1;EN | 579 KB | 11 四月 2016 | 01_00 |
Title | Size | Date | Version |
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PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Altium - v1.0 | 1 MB | 22 十月 2013 | 01_00 |
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Cadence - v1.0 | 139 KB | 22 十月 2013 | 01_00 |
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Eagle - v1.0 | 27 KB | 22 十月 2013 | 01_00 |
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Mentor - v1.0 | 176 KB | 22 十月 2013 | 01_00 |
PCB Footprints & Symbols - BFP842ESD - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - MWO - v2.0.zip;EN | 242 KB | 07 一月 2015 | 02_00 |