BFP842ESD

The BFP842ESD is a high performance HBT (Heterojunction Bipolar Transistor) specifically designed for 2.3 - 3.5 GHz LNA applications. The device is based upon the reliable high volume SiGe:C technology of Infineon. The BFP842ESD provides inherently good input power match as well as inherently good noise match between 2.3 and 3.5 GHz. The simultaneous noise and power match without lossy external matching components at the input leads to a low external parts count, to a very good noise figure and to a high transducer gain in the application. Integrated protection elements at in- and output make the device robust against ESD and excessive RF input power. The device offers its high performance at low current and voltage and is especially well-suited for portable batterypowered applications in which energy efficiency is a key requirement. The device comes in an easy to use industry standard package with visible leads.

As very low noise amplifier (LNA) in:

As discrete active mixer, buffer amplifier in VCOs

ParametricBFP842ESD
VCEO  max3.25V
IC  max40.0mA
NF0.4dB
Gmax23.5dB
OIP324.5dBm
OP1dB8.0dBm
Sales Product NameBFP842ESD
OPNBFP842ESDH6327XTSA1
Product Statusactive and preferred
Package NamePG-SOT343-4
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size3000
Packing TypeTAPE & REEL
Summary of Features:
  • Robust very low noise amplifier based on Infineon´s reliable, high volume
  • SiGe:C technology
  • Unique combination of high end RF performance and robustness: 16 dBm maximum RF input power, 1 kV HBM ESD hardness
  • High linearity OIP3 = 25.5 dBm at 3.5 GHz, 2.5 V, 15 mA
  • High transition frequency fT = 60 GHz enables very low noise figure at high frequencies: NFmin = 0.65 dB at 3.5 GHz, 2.5 V, 5 mA
  • Transducer gain |S21|2 = 16 dB @ 3.5 GHz, 2.5 V, 15 mA
  • Ideal for low voltage applications e.g. VCC = 1.8 V and 2.85 V (3.3 V, 3.6 V requires corresponding collector resistor)
  • Low power consumption, ideal for mobile applications
  • Easy to use Pb free (RoHS compliant) and halogen free industry standard package with visible leads
Target Applications:
  • Mobile and fixed connectivity applications: WLAN 802.11b/g/n, WiMAX 2.5/3.5 GHz, Bluetooth
  • Satellite communication systems: GNSS Navigation systems (GPS, GLONASS, COMPASS/Beidu/Galileo), Satellite radio (SDARs, DAB and C-band LNB) and C-band LNB (1st and 2nd stage LNA)
  • Multimedia applications such as mobile/portable TV, Mobile TV, FM Radio
  • 3G/4G UMTS/LTE mobile phone applications
  • ISM applications like RKE, AMR and Zigbee
Data Sheet
TitleSizeDateVersion
BFP842ESD,EN1.3 MB11 Apr 201301_01
Application Notes
TitleSizeDateVersion
AN322: BFP842ESD SiGe:C Ultra Low Noise RF Transistor in Low Parts Count 2.4 – 2.5 GHz WLAN LNA Application845 KB18 Jun 201301_00
Product Brief
TitleSizeDateVersion
Infineon-RF-Transistors-8th-Generation-PB-v01_00-CNCN362 KB25 Apr 201601_00
Infineon-RF-Transistors-8thGeneration-PB-v01_00-ENEN289 KB01 Apr 201601_00
Material Content SheetInfo
TitleSizeDateVersion
MCDS_2013-08-29_12-47-09_MA000967034_PG-SOT343-4-2.pdf23 KB31 Oct 201301_00
PCB Design Data
TitleSizeDateVersion
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Altium - v1.01 MB22 Oct 201301_00
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Cadence - v1.0139 KB22 Oct 201301_00
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Eagle - v1.027 KB22 Oct 201301_00
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Mentor - v1.0176 KB22 Oct 201301_00
PCB Footprints & Symbols - BFP842ESD - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - MWO - v2.0.zipEN242 KB07 Jan 201502_00
Evaluation Boards
BoardFamilyDescriptionStatus
BFP640ESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP640ESD is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP740 BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP740 is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP740ESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP740ESD is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP740FESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP740FESD is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP840ESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP840ESD is a hetero-junction bipolar transistor specifically designed for 5 GHz LNA applications.Please refer to an application note or a technical report when you order the evaluation board.on request
BOARD BFP840FESDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP840FESD is a hetero-junction bipolar transistor specifically designed for 5 GHz LNA applications.Please refer to an application note or a technical report when you order the evaluation board.on request
BFP842ESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP842ESD is a hetero-junction bipolar transistor specifically designed for 2.3 - 3.5 GHz LNA applications. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP843 BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP843 is a robust low noise broadband pre-matched bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.
BFR840L3RHESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFR840L3RHESD is a hetero-junction bipolar transistor specifically designed for 5 GHz LNA applications.Please refer to an application note or a technical report when you order the evaluation board.on request
BFR843EL3 BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFR843EL3 is a robust low noise broadband pre-matched bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP640 BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP640 is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
Simulation Models
TitleSizeDateVersion
Infineon-AN322-BFP842ESD-AWR-MWO-Apllication-Example-SM-v01_00-ENEN169 KB26 Oct 201501_00
Infineon-RFtransistor-Keysight-ADS-Design-Kit-SM-v02_00-ENEN940 KB26 Oct 201502_00
Infineon-RFTransistor-AWR-MWO-Design-Kit-SM-v02_00-ENEN21.4 MB11 Dec 201502_00
Simulation Data
TitleSizeDateVersion
BFP842ESD426 KB27 Aug 2012
Package Data
TitleSizeDateVersion
PG-SOT343-4-2 | BFP842ESDH6327XTSA1EN579 KB11 Apr 201601_00
PCB Design Data
TitleSizeDateVersion
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Altium - v1.01 MB22 Oct 201301_00
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Cadence - v1.0139 KB22 Oct 201301_00
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Eagle - v1.027 KB22 Oct 201301_00
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Mentor - v1.0176 KB22 Oct 201301_00
PCB Footprints & Symbols - BFP842ESD - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - MWO - v2.0.zipEN242 KB07 Jan 201502_00
EN BFP842ESD
AN322: BFP842ESD SiGe:C Ultra Low Noise RF Transistor in Low Parts Count 2.4 – 2.5 GHz WLAN LNA Application BFP842ESD
CN BFR840L3RHESD
EN BFR840L3RHESD
MCDS_2013-08-29_12-47-09_MA000967034_PG-SOT343-4-2.pdf BFP842ESD
EN BFP842ESD
EN BFP780
EN BFQ790
BFP842ESD BFP842ESD
EN BFP842ESD
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Altium - v1.0 BFR740L3RH
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Cadence - v1.0 BFR740L3RH
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Eagle - v1.0 BFR740L3RH
PCB Footprints & Symbols - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Mentor - v1.0 BFR740L3RH