Summary of Features:

• Low noise broadband NPN RF transistor based on Infineon´s reliable, high volume SiGe:C bipolar technology
• High maximum RF input power and ESD robustness 20 dBm maximum RF input power, 1.5 KV HBM ESD hardness
• Unique combination of high RF performance, robustness and ease of application circuit design
• Low noise figure: NFmin = 1.0 dB at 2.4 GHz and 1.2 dB at 5.5 GHz, 1.8 V, 8 mA
• High gain: |S21|2 = 21 dB at 2.4 GHz and 15.5 dB at 5.5 GHz, 1.8 V, 15 mA
• OIP3 = 23 dBm at 2.4 GHz and 20 dBm at 5.5 GHz, 1.8 V, 20 mA
• Ideal for low voltage applications e.g. VCC = 1.2 V and 1.8 V (2.85 V, 3.3 V, 3.6 V requires corresponding collector resistor)
• Low power consumption, ideal for mobile applications
• Easy to use Pb free (RoHS compliant) and halogen free industry standard package with visible leads
• Qualification report according to AEC-Q101 available

Target Applications:

• Wireless Communications: WLAN IEEE802.11b,g,n,a,ac single- and dual band applications, broadband LTE or WiMAX LNA
• Satellite navigation systems (e.g. GPS, GLONASS, COMPASS...) and satellite C-band LNB (1st and 2nd stage LNA)
• Broadband amplifiers: Dualband WLAN, multiband mobile phone, UWB up to 10 GHz
• ISM bands up to 10 GHz
• Dedicated short range communication (DSRC) system: WLAN IEEE802.11p