BFP843

Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor

As Low Noise Amplifier (LNA) in

ParametricBFP843
VCEO  max2.25V
IC  max55.0mA
NF0.95dB
Gmax22.5dB
OIP324.0dBm
PackageSOT343
Sales Product NameBFP843
OPNBFP843H6327XTSA1
Product Statusactive and preferred
Package NamePG-SOT343-4
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size3000
Packing TypeTAPE & REEL
Moisture Level1
Summary of Features:
  • Low noise broadband NPN RF transistor based on Infineon´s reliable, high volume SiGe:C bipolar technology
  • High maximum RF input power and ESD robustness 20 dBm maximum RF input power, 1.5 KV HBM ESD hardness
  • Unique combination of high RF performance, robustness and ease of application circuit design
  • Low noise figure: NFmin = 1.0 dB at 2.4 GHz and 1.2 dB at 5.5 GHz, 1.8 V, 8 mA
  • High gain: |S21|2 = 21 dB at 2.4 GHz and 15.5 dB at 5.5 GHz, 1.8 V, 15 mA
  • OIP3 = 23 dBm at 2.4 GHz and 20 dBm at 5.5 GHz, 1.8 V, 20 mA
  • Ideal for low voltage applications e.g. VCC = 1.2 V and 1.8 V (2.85 V, 3.3 V, 3.6 V requires corresponding collector resistor)
  • Low power consumption, ideal for mobile applications
  • Easy to use Pb free (RoHS compliant) and halogen free industry standard package with visible leads
  • Qualification report according to AEC-Q101 available
Target Applications:
  • Wireless Communications: WLAN IEEE802.11b,g,n,a,ac single- and dual band applications, broadband LTE or WiMAX LNA
  • Satellite navigation systems (e.g. GPS, GLONASS, COMPASS...) and satellite C-band LNB (1st and 2nd stage LNA)
  • Broadband amplifiers: Dualband WLAN, multiband mobile phone, UWB up to 10 GHz
  • ISM bands up to 10 GHz
  • Dedicated short range communication (DSRC) system: WLAN IEEE802.11p
Data Sheet
TitleSizeDateVersion
BFP843 - Robust Low Noise Broadband Pre-Matched Bipolar RF Transistor,EN1.4 MB02 Jul 201301_00
Application Notes
TitleSizeDateVersion
AN312 - BFP843 SiGe:C Ultra Low Noise RF Transistor in Dual -Band 2.4 - 2.5 GHz & 5 - 6 GHz WiFi / WLAN Application707 KB12 Jul 201301_00
Product Brief
TitleSizeDateVersion
Infineon-RF-Transistors-8th-Generation-PB-v01_00-CNCN362 KB25 Apr 201601_00
Infineon-RF-Transistors-8thGeneration-PB-v01_00-ENEN289 KB01 Apr 201601_00
Material Content SheetInfo
TitleSizeDateVersion
MCDS_2013-08-29_10-16-58_MA001070990_PG-SOT343-4-2.pdf23 KB31 Oct 201301_00
PCB Design Data
TitleSizeDateVersion
PCB Footprints and Symbols - BFP843 - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Altium - v2.0.zipEN524 KB15 Jan 201601_00
PCB Footprints and Symbols - BFP843 - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Eagle - v2.0.zipEN2 KB15 Jan 201601_00
PCB Footprints and Symbols - BFP843 - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Cadence - v2.0.zipEN12 KB15 Jan 201601_00
PCB Footprints and Symbols - BFP843 - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Mentor - v2.0.zipEN2 KB15 Jan 201601_00
PCB Footprints & Symbols - BFP843 - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - MWO - v2.0.zipEN241 KB07 Jan 201502_00
Evaluation Boards
BoardFamilyDescriptionStatus
BFP640ESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP640ESD is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP740 BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP740 is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP740ESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP740ESD is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP740FESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP740FESD is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP840ESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP840ESD is a hetero-junction bipolar transistor specifically designed for 5 GHz LNA applications.Please refer to an application note or a technical report when you order the evaluation board.on request
BOARD BFP840FESDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP840FESD is a hetero-junction bipolar transistor specifically designed for 5 GHz LNA applications.Please refer to an application note or a technical report when you order the evaluation board.on request
BFP842ESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP842ESD is a hetero-junction bipolar transistor specifically designed for 2.3 - 3.5 GHz LNA applications. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP843 BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP843 is a robust low noise broadband pre-matched bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.
BFR840L3RHESD BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFR840L3RHESD is a hetero-junction bipolar transistor specifically designed for 5 GHz LNA applications.Please refer to an application note or a technical report when you order the evaluation board.on request
BFR843EL3 BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFR843EL3 is a robust low noise broadband pre-matched bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
BFP640 BOARDUltra Low Noise SiGe:C Transistors for use up to 12 GHzThe BFP640 is a low noise wideband NPN bipolar RF transistor. Please refer to an application note or a technical report when you order the evaluation board.on request
Simulation Models
TitleSizeDateVersion
Infineon-AN312-BFP843-AWR-MWO-Apllication-Example-SM-v01_00-ENEN140 KB26 Oct 201501_00
Infineon-RFTransistor-AWR-MWO-Design-Kit-SM-v02_00-ENEN21.4 MB11 Dec 201502_00
Simulation Data
TitleSizeDateVersion
BFP843649 KB27 Sep 2013
PCB Design Data
TitleSizeDateVersion
PCB Footprints and Symbols - BFP843 - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Altium - v2.0.zipEN524 KB15 Jan 201601_00
PCB Footprints and Symbols - BFP843 - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Eagle - v2.0.zipEN2 KB15 Jan 201601_00
PCB Footprints and Symbols - BFP843 - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Cadence - v2.0.zipEN12 KB15 Jan 201601_00
PCB Footprints and Symbols - BFP843 - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - Mentor - v2.0.zipEN2 KB15 Jan 201601_00
PCB Footprints & Symbols - BFP843 - Ultra Low Noise SiGeC Transistors for use up to 12 GHz - MWO - v2.0.zipEN241 KB07 Jan 201502_00
EN BFP843
AN312 - BFP843 SiGe:C Ultra Low Noise RF Transistor in Dual -Band 2.4 - 2.5 GHz & 5 - 6 GHz WiFi / WLAN Application BFP843
CN BFR840L3RHESD
EN BFR840L3RHESD
MCDS_2013-08-29_10-16-58_MA001070990_PG-SOT343-4-2.pdf BFP843
EN BFP843
EN BFQ790
BFP843 BFP843