BGS15MA12

The BGS15MA12 RF MOS switch is specifically designed for LTE and WCDMA diversity applications. This SP5T offers low insertion loss and low harmonic generation in termination mode.

The switch is controlled via a MIPI RFFE controller. The on-chip controller allows power-supply voltages from 1.1 to 1.95 V. The switch features direct-connect-to-battery functionality and DC-free RF ports. Unlike GaAs technology, external DC blocking capacitors at the RF Ports are only required if DC voltage is applied externally. The BGS15MA12 RF Switch is manufactured in Infineon’s patented MOS technology, offering the performance of GaAs with the economy and integration of conventional CMOS including the inherent higher ESD robustness. The device has a very small size of only 1.1 x 1.9mm2 and a maximum height of 0.65 mm.

BGS15MA12
BGS15MA12E6327XTSA1
active and preferred
PG-ATSLP-12
yes
yes
yes
4500
TAPE & REEL
Sales Product NameBGS15MA12
OPNBGS15MA12E6327XTSA1
Product Statusactive and preferred
Package NamePG-ATSLP-12
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size4500
Packing TypeTAPE & REEL
Summary of Features:
  • Low insertion loss
  • Low harmonic generation
  • High port-to-port-isolation
  • Suitable for LTE / WCDMA Rx Applications
  • 0.1 to 2.9 GHz coverage
  • No decoupling capacitors required if no DC applied on RF lines
  • On chip control logic including ESD protection
  • Integrated MIPI RFFE interface operating in 1.1 to 1.95 V voltage range
  • Software programmable MIPI RFFE USID
  • Direct to battery supply
  • Small form factor 1.1mm x 1.9mm
  • No power supply blocking required
  • High EMI robustness
  • RoHS and WEEE compliant package
Target Applications:
  • Suitable for LTE / WCDMA Rx Applications
  • Especially designed for Multi-Band RX Diversity with CA
Data Sheet
TitleSizeDateVersion
Infineon-BGS15MA12-DS-v03_01-EN,EN738 KB11 五月 201603_01
Package Data
TitleSizeDateVersion
PG-ATSLP-12-4 | BGS15MA12E6327XTSA1EN547 KB11 四月 201601_00
EN BGS15MA12
EN BGS15MA12