BGS15MA12
The BGS15MA12 RF MOS switch is specifically designed for LTE and WCDMA diversity applications. This SP5T offers low insertion loss and low harmonic generation in termination mode.
The switch is controlled via a MIPI RFFE controller. The on-chip controller allows power-supply voltages from 1.1 to 1.95 V. The switch features direct-connect-to-battery functionality and DC-free RF ports. Unlike GaAs technology, external DC blocking capacitors at the RF Ports are only required if DC voltage is applied externally. The BGS15MA12 RF Switch is manufactured in Infineon’s patented MOS technology, offering the performance of GaAs with the economy and integration of conventional CMOS including the inherent higher ESD robustness. The device has a very small size of only 1.1 x 1.9mm2 and a maximum height of 0.65 mm.
BGS15MA12 | |
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BGS15MA12E6327XTSA1 | |
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active and preferred | |
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PG-ATSLP-12 | |
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yes | |
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yes | |
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yes | |
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4500 | |
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TAPE & REEL | |
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Sales Product Name | BGS15MA12 |
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OPN | BGS15MA12E6327XTSA1 |
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Product Status | active and preferred |
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Package Name | PG-ATSLP-12 |
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Completely lead free | yes |
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Halogen free | yes |
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RoHS compliant | yes |
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Packing Size | 4500 |
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Packing Type | TAPE & REEL |
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| Summary of Features:- Low insertion loss
- Low harmonic generation
- High port-to-port-isolation
- Suitable for LTE / WCDMA Rx Applications
- 0.1 to 2.9 GHz coverage
- No decoupling capacitors required if no DC applied on RF lines
- On chip control logic including ESD protection
- Integrated MIPI RFFE interface operating in 1.1 to 1.95 V voltage range
- Software programmable MIPI RFFE USID
- Direct to battery supply
- Small form factor 1.1mm x 1.9mm
- No power supply blocking required
- High EMI robustness
- RoHS and WEEE compliant package
Target Applications:- Suitable for LTE / WCDMA Rx Applications
- Especially designed for Multi-Band RX Diversity with CA
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Data Sheet
Package Data