FF450R33TE3

XHP™ 3 3300V dual IGBT module with IGBT3 and Emitter Controlled 3 Diode - Designed for flexibility and reliability!

ParametricFF450R33TE3
ConfigurationDual
IC(nom) / IF(nom)450.0A
VCE(sat) (Tvj=25°C typ)2.55V
VF (Tvj=25°C typ)3.1V
HousingXHP™ 3
Sales Product NameFF450R33TE3
OPN
Product Statusfor price proj. only
Package NameA-XHP100-3
Completely lead freeno
Halogen freeno
RoHS compliantno
Packing Size4
Packing TypeTRAY
Summary of Features:
  • Modular approach
  • High DC stability
  • High short-circuit capability
  • Low switching losses
  • Low V CEsat (with positive temperature coefficient)
  • Unbeatable robustness
  • AlSiC base plate for increased thermal cycling capability
  • Package with CTI > 600
  • Isolated base plate
Benefits:
  • One, high-power platform offering flexibility and scalability
  • High power density and optimized frame sizes
  • High reliability and long service life
  • Reduced system cost
  • Low inductance
Benefits:
  • One, high-power platform offering flexibility and scalability
  • High power density and optimized frame sizes
  • High reliability and long service life
  • Reduced system cost
  • Low inductance
功能框图
Data Sheet
TitleSizeDateVersion
FF450R33TE3 (chinese/english),CN/EN,EN/DE,JA/EN1.2 MB19 五月 201602_00
Product Brochure
TitleSizeDateVersion
Product Brochure Industrial Gate Driver ICs Overview；EN613 KB27 四月 201603_00
Best-in-class products to meet your application demands；EN1.3 MB27 四月 201608_00
Application Notes
TitleSizeDateVersion
Industrial IGBT Modules Explanation of Technical Information；EN2.2 MB03 十二月 201501_02
Driving IGBTs with unipolar gate voltage；EN389 KB10 二月 2014
Application Note IGBT Definition of Junction Temperature；EN84 KB09 四月 2009
Product Brief
TitleSizeDateVersion
XHP™ 3 - Flexible high-power platform；EN239 KB27 四月 201602_00
Article
TitleSizeDateVersion
Bauraum- und Verlustoptimierung bei höherer Leistungsfähigkeit von Umrichtern:；DE1.6 MB05 五月 201501_00
Infineon-Where_is _the_Journey_Headed-ART-v01_00-EN；EN264 KB03 十一月 201401_00
Neuer Ansatz bei High-Power-IGBT-Modulen: Die Zukunft mitbestimmen；DE1.6 MB07 四月 201501_00
大功率半导体的未来——何去何从？；CN319 KB17 三月 201501_00
Power zeitgemäß verpackt；DE1.1 MB05 三月 201501_00
System optimization – less is more；EN787 KB13 十月 201501_00
Boost Your System! - Defining the Future of IGBT High-Power Modules；EN455 KB05 三月 201501_00
Editorials
TitleSizeDateVersion
Electrical performance of a low inductive 3.3kV half bridge IGBT module；EN366 KB04 十一月 201501_00
Application Brochure
TitleSizeDateVersion
Solutions for Traction Systems；EN1.5 MB27 四月 201608_00
Solutions for Industrial Drives；EN2.4 MB27 四月 201609_00
Solutions for Wind Energy Systems；EN5.4 MB18 四月 2013
Solutions for Uninterruptible Power Supply (UPS) Systems；EN2.6 MB27 四月 201608_00
Product Catalogue
TitleSizeDateVersion
Short Form Catalog - May 2016；EN4.4 MB09 五月 201601_00
Simulation Models
TitleSizeDateVersion
IPOSIM；EN3.4 MB18 三月 2014
CN/EN FF450R33TE3
EN/DE FF450R33TE3
JA/EN FF450R33TE3
EN 2EDN7524G
EN IFS75B12N3E4_B32
EN IFS75B12N3E4_B32
EN IFS75B12N3E4_B32
EN IFS75B12N3E4_B32
EN FF450R33TE3
DE FF450R33TE3
EN FF450R33TE3
DE FF450R33TE3
CN FF450R33TE3
DE FF450R33TE3
EN FF450R33TE3
EN FF450R33TE3
EN FF450R33TE3
EN 2ED300C17-ST
EN IFS75B12N3E4_B32
EN IFS75B12N3E4_B32
EN IFS75B12N3E4_B32
EN IDV20E65D1
EN IFS75B12N3E4_B32
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