| Parametric | IPS65R600E6 |
|---|
| Package | IPAK SL (TO-251 SL) |
|---|
| VDS
max | 650.0V |
|---|
| RDS (on)
max | 600.0mΩ |
|---|
| Polarity | N |
|---|
| ID
max | 7.3A |
|---|
| Ptot
max | 63.0W |
|---|
| IDpuls
max | 18.0A |
|---|
| VGS(th)
min
max | 2.5V
3.5V |
|---|
| QG | 23.0nC |
|---|
| Rth | 2.0K/W |
|---|
| RthJC
max | 2.0K/W |
|---|
| RthJA
max | 62.0K/W |
|---|
| Operating Temperature
min
max | -55.0°C
150.0°C |
|---|
| Pin Count | 3.0Pins |
|---|
| Mounting | THT |
|---|
| Sales Product Name | IPS65R600E6 |
|---|
| OPN | IPS65R600E6AKMA1 |
|---|
| Product Status | active and preferred |
|---|
| Package Name | PG-TO251-3 |
|---|
| Completely lead free | no |
|---|
| Halogen free | yes |
|---|
| RoHS compliant | yes |
|---|
| Packing Size | 1500 |
|---|
| Packing Type | TUBE |
|---|
| |
|---|
| Description:- 600V CoolMOS™ E6 is replacement for 600V CoolMOS™ C3
- 650V CoolMOS™ E6 is replacement for 650V CoolMOS™ C3
Summary of Features:- Easy control of switching behavior
- Very high commutation ruggedness
- Extremely low losses due to very low Figure of Merit (R DS(ON)*Q g) and E oss)
- Easy to use
- Better light load efficiency compared to C3
- Outstanding reliability with proven CoolMOS™ quality combined with high body diode ruggedness
- Better price performance in comparison to previous CoolMOS™ generations
- More efficient, more compact, lighter and cooler
Benefits:- Improved power density
- Improved reliability
- General purpose part can be used in both soft and hard switching topologies
- Better light load effciency
- Improved effciency in hard switching applications
- Improved ease of use
- Reduces possible ringing due to pcb layout and package parasitic effects
Target Applications:- Consumer
- Adapter
- eMobility
- PFC stages for Server & Telecom
- SMPS
- PC Power
- Solar
- Lighting
|