| Parametric | IPT65R195G7 |
|---|
| Package | TO-Leadless (HSOF-8) |
|---|
| VDS
max | 650.0V |
|---|
| RDS (on)
max | 195.0mΩ |
|---|
| Polarity | N |
|---|
| ID
max | 14.0A |
|---|
| Ptot
max | 97.0W |
|---|
| IDpuls
max | 41.0A |
|---|
| VGS(th)
min
max | 3.0V
4.0V |
|---|
| QG | 20.0nC |
|---|
| Rth | 1.29K/W |
|---|
| RthJC
max | 1.29K/W |
|---|
| RthJA
max | 62.0K/W |
|---|
| Operating Temperature
min
max | -55.0°C
150.0°C |
|---|
| Pin Count | 8.0Pins |
|---|
| Mounting | SMT |
|---|
| Qgd | 6.0nC |
|---|
| Tj
min
max | -55.0°C
150.0°C |
|---|
| Sales Product Name | IPT65R195G7 |
|---|
| OPN | IPT65R195G7XTMA1 |
|---|
| Product Status | active and preferred |
|---|
| Package Name | PG-HSOF-8 |
|---|
| Completely lead free | yes |
|---|
| Halogen free | yes |
|---|
| RoHS compliant | yes |
|---|
| Packing Size | 2000 |
|---|
| Packing Type | TAPE & REEL |
|---|
| Moisture Level | 1 |
|---|
| Summary of Features:- Gives best-in-class FOM R DS(on)*E oss and R DS(on)*Q G
- Enables best-in-class R DS(on) in smallest footprint
- Inbuilt 4th pin Kelvin source configuration and low parasitic source inductance (~1nH)
- Is MSL1 compliant, total Pb-free, has easy visual inspection grooved leads
- Enables improved thermal performance R th
Benefits:- FOM R DS(on)xQ G is 14% better than previous 650V CoolMOS™ C7 enabling faster switching leading to higher efficiency
- Power density trough BIC 33mΩ in 115mm 2 TOLL footprint
- Reducing parasitic source inductance by Kelvin source improves efficiency switching and ease-of-use
- TOLL package is easy to use and has the highest quality standards
- Improved thermals enable SMD TOLL package to be used in higher current designs than has been previously possible
Target Applications: |
