The new 600V CoolMOS ™ C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering a GaN-like level of performance in PFC, TTF and other hard-switching topologies.
Efficiency and TCO (Total Cost of Ownership) applications such as Hyperdata Centers and high efficiency Telecom Rectifiers (>96%) benefit from the higher efficiency offered by CoolMOS ™ C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V CoolMOS ™ C7 Power MOSFETs in a TO-247 4pin package can result in energy cost reductions of ~10% for PSU energy loss.
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Title | Size | Date | Version |
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Infineon-IPW60R180C7-DS-v02_00-EN,EN | 1.6 MB | 13 五月 2015 | 02_00 |
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CoolMOS™ Benefits in Hard and Soft Switching;EN | 1.5 MB | 09 六月 2016 | 06_16 |
CoolMOS™ Selection Guide;EN | 2.7 MB | 30 五月 2016 | 02_00 |
Title | Size | Date | Version |
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Product Brief 600V CoolMOS™ C7;EN | 389 KB | 18 五月 2015 | 01_00 |
Product Brief 500V 600V 650V 700V CoolMOS™ CE in SOT-223 Package Japanese;JA | 712 KB | 18 四月 2016 | 01_00 |
Product Brief CoolMOS™ in TO-247 4pin package;EN | 409 KB | 03 七月 2015 | 01_00 |
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Article - PSD - Designing for Optimum Power Conversion - 600V CoolMOS™ C7 - 2EDN Gatedriver;EN | 1.7 MB | 10 六月 2015 | 01_00 |
Article Die Alternative zu GaN German;DE | 1.5 MB | 21 九月 2015 | 01_00 |
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Press Release 600V CoolMOS™ C7 and 2EDN EiceDRIVER™ English;EN | 162 KB | 19 五月 2015 | 01_00 |
High Voltage Power MOSFETs CoolMOS™ Positioning;EN | 252 KB | 24 十一月 2014 | 01_00 |
Advertisement SMPS;EN | 229 KB | 20 八月 2015 | 01_00 |
Advertisement Automatic Openings System;EN | 134 KB | 28 一月 2016 | 01_00 |
Advertisement 600V CoolMOS™ C7;EN | 117 KB | 20 八月 2015 | 01_00 |
Press Release 600V CoolMOS™ C7 and 2EDN EiceDRIVER™ German;DE | 163 KB | 19 五月 2015 | 01_00 |
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Solutions for Solar Energy Systems;EN | 1.9 MB | 26 六月 2014 | 01_00 |
Application Brochure - Infineon Solutions for Transportation;EN | 6.9 MB | 01 六月 2013 | 00_00 |
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NEW! Power Management Selection Guide 2016;EN | 4.7 MB | 22 二月 2016 | 00_00 |
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MCDS_2015-06-08_10-21-05_MA001304870_PG-TO247-3-44.pdf;EN | 28 KB | 08 六月 2015 | 01_00 |
MCDS_2015-06-08_10-16-28_MA001306430_PG-TO247-3-41.pdf;EN | 28 KB | 08 六月 2015 | 01_00 |
MCDS_2015-08-14_07-31-28_MA001374174_PG-TO247-3-44.pdf;EN | 28 KB | 14 八月 2015 | 01_00 |
MCDS_2015-07-07_14-35-29_MA001374586_PG-TO247-3-41.pdf;EN | 28 KB | 07 七月 2015 | 02_00 |
MCDS_2016-04-11_04-40-40_MA001489034_PG-TO247-3-41.pdf;EN | 28 KB | 11 四月 2016 | 01_00 |
MCDS_2016-04-11_10-05-33_MA001493592_PG-TO247-3-44.pdf;EN | 28 KB | 11 四月 2016 | 01_00 |
MCDS_2016-05-24_10-17-33_MA001493602_PG-TO247-3-41.pdf;EN | 28 KB | 24 五月 2016 | 01_00 |
Title | Size | Date | Version |
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Simulation Model CoolMOS™ Power MOSFET PSpice 600V C7;EN | 7 KB | 30 九月 2015 | 01_00 |
Title | Size | Date | Version |
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PG-TO247-3-44 | IPW60R180C7XKSA1;EN | 507 KB | 11 四月 2016 | 01_00 |