IRF9389

30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package

ParametricIRF9389
PackageSO-8
VDS  max30.0V
RDS (on) (@10V)  max27.0mΩ
RDS (on)  max27.0mΩ
RDS (on) (@4.5V)  max40.0mΩ
RDS (on) (@10V)  max64.0mΩ
RDS (on)  max64.0mΩ
RDS (on) (@4.5V)  max103.0mΩ
PolarityN+P
ID (@ TA=25°C)  max-4.6A
ID (@ TA=70°C)  max-3.7A
ID (@ TA=70°C)  max5.4A
ID (@ TA=25°C)  max6.8A
Ptot (@ TA=25°C)  max2.0W
QG6.8nC
QG8.1nC
Moisture Sensitivity Level1
Qgd (typ)0.98nC
RthJA  max62.5K/W
VGS  max20.0V
Qgd (typ)2.1nC
Tj  max150.0°C
Sales Product NameIRF9389
OPNIRF9389TRPBF
Product Statusactive and preferred
Package NameSO8
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size4000
Packing TypeTAPE & REEL
Moisture Level1
OPNIRF9389PBF
Product Statusdiscontinued
Package NameSO8
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size95
Packing TypeTUBE
Moisture Level1
Benefits:
  • RoHS Compliant
  • Industry-Standard Pinout
  • Compatible with Existing Surface Mount Techniques
  • Qualified MSL1
  • Dual N and P-Channel MOSFET
Data Sheet
TitleSizeDateVersion
Data Sheet - IRF9389,EN244 KB18 一月 2013
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 二月 201600_00
Simulation Models
TitleSizeDateVersion
Saber Model - IRF9389PBF_PCHEN2 KB18 一月 2013
Saber Model - IRF9389PBF_NCHEN2 KB18 一月 2013
Spice Model - IRF9389PBF_PCHEN2 KB18 一月 2013
Spice Model - IRF9389PBF_NCHEN2 KB18 一月 2013
EN IRF9389
EN IDV20E65D1
EN IRF9389
EN IRF9389
EN IRF9389
EN IRF9389