IRF9389

30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package

ParametricIRF9389
PackageSO-8
VDS  max30.0V
RDS (on) (@10V)  max27.0mΩ
RDS (on)  max27.0mΩ
RDS (on) (@4.5V)  max40.0mΩ
RDS (on) (@10V)  max64.0mΩ
RDS (on)  max64.0mΩ
RDS (on) (@4.5V)  max103.0mΩ
PolarityN+P
ID (@ TA=25°C)  max-4.6A
ID (@ TA=70°C)  max-3.7A
ID (@ TA=70°C)  max5.4A
ID (@ TA=25°C)  max6.8A
Ptot (@ TA=25°C)  max2.0W
QG6.8nC
QG8.1nC
Moisture Sensitivity Level1
Qgd (typ)0.98nC
RthJA  max62.5K/W
VGS  max20.0V
Qgd (typ)2.1nC
Tj  max150.0°C
Sales Product NameIRF9389
OPNIRF9389PBF
Product Statusdiscontinued
Package NameSO8
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size95
Packing TypeTUBE
Moisture Level1
OPNIRF9389TRPBF
Product Statusactive and preferred
Package NameSO8
Completely lead freeyes
Halogen freeyes
RoHS compliantyes
Packing Size4000
Packing TypeTAPE & REEL
Moisture Level1
Benefits:
  • RoHS Compliant
  • Industry-Standard Pinout
  • Compatible with Existing Surface Mount Techniques
  • Qualified MSL1
  • Dual N and P-Channel MOSFET
Data Sheet
TitleSizeDateVersion
Data Sheet - IRF9389,EN244 KB18 Jan 2013
Product Selection Guide
TitleSizeDateVersion
NEW! Power Management Selection Guide 2016EN4.7 MB22 Feb 201600_00
Simulation Models
TitleSizeDateVersion
Saber Model - IRF9389PBF_NCHEN2 KB18 Jan 2013
Spice Model - IRF9389PBF_PCHEN2 KB18 Jan 2013
Spice Model - IRF9389PBF_NCHEN2 KB18 Jan 2013
Saber Model - IRF9389PBF_PCHEN2 KB18 Jan 2013
EN IRF9389
EN IDV20E65D1
EN IRF9389
EN IRF9389
EN IRF9389
EN IRF9389