The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array achieves very high fT (10GHz) while maintaining excellent hFE and VBE matching characteristics over temperature. Collector leakage currents are maintained to under 0.01nA.
Key Features
- High Gain-Bandwidth Product (fT) 10GHz
- High Power Gain-Bandwidth Product 5GHz
- High Current Gain (hFE) 70
- Noise Figure (Transistor) 3.5dB
- Low Collector Leakage Current <0.01nA
- Excellent hFE and VBE Matching
- Pin-to-Pin to UPA102G
- Pb-Free Plus Anneal Available (RoHS Compliant)
Applications
- Single Balanced Mixers
- Wide Band Amplification Stages
- Differential Amplifiers
- Multipliers
- Automatic Gain Control Circuits
- Frequency Doublers, Tripplers
- Oscillators
- Constant Current Sources
- Wireless Communication Systems
- Radio and Satellite Communications
- Fiber Optic Signal Processing
- High Performance Instrumentation
Order Information| Part Number | Package Type | Weight(g) | Pins | MSL Rating | Peak Temp (°C) | RoHS Status |
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| HFA3102B | 14 Ld SOIC | 0.13 | 14 | | 240 | |
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| HFA3102B96 | 14 Ld SOIC T+R | 0.13 | 14 | | 240 | |
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| HFA3102BZ | 14 Ld SOIC | 0.13 | 14 | 3 | 260 | RoHS |
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| HFA3102BZ96 | 14 Ld SOIC T+R | 0.13 | 14 | 3 | 260 | RoHS |
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