The HIP2100 is a high frequency, 100V Half Bridge N-Channel power MOSFET driver IC. The low-side and high-side gate drivers are independently controlled and matched to 8ns. This gives the user maximum flexibility in dead-time selection and driver protocol. Undervoltage protection on both the low-side and high-side supplies force the outputs low. An on-chip diode eliminates the discrete diode required with other driver ICs. A new level-shifter topology yields the low-power benefits of pulsed operation with the safety of DC operation. Unlike some competitors, the high-side output returns to its correct state after a momentary undervoltage of the high-side supply.
Key Features
- Drives N-Channel MOSFET Half Bridge
- SOIC, EPSOIC, QFN and DFN Package Options
- SOIC, EPSOIC and DFN Packages Compliant with 100V Conductor Spacing Guidelines of IPC-2221
- Pb-Free Product Available (RoHS Compliant)
- Bootstrap Supply Max Voltage to 114VDC
- On-Chip 1Ω Bootstrap Diode
- Fast Propagation Times for Multi-MHz Circuits
- Drives 1000pF Load with Rise and Fall Times Typ. 10ns
- CMOS Input Thresholds for Improved Noise Immunity
- Independent Inputs for Non-Half Bridge Topologies
- No Start-Up Problems
- Outputs Unaffected by Supply Glitches, HS Ringing Below Ground, or HS Slewing at High dv/dt
- Low Power Consumption
- Wide Supply Range
- Supply Undervoltage Protection
- 3Ω Driver Output Resistance
- QFN/DFN Package:
- Compliant to JEDEC PUB95 MO-220 QFN - Quad Flat No Leads - Package Outline
- Near Chip Scale Package Footprint, which Improves PCB Efficiency and has a Thinner Profile
Applications
- Telecom Half Bridge Power Supplies
- Avionics DC/DC Converters
- Two-Switch Forward Converters
- Active Clamp Forward Converters

Order InformationPart Number | Package Type | Weight(g) | Pins | MSL Rating | Peak Temp (°C) | RoHS Status |
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HIP2100EIBZ | 8 Ld SOIC | 0.075 | 8 | 2 | 260 | RoHS |
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HIP2100EIBZT | 8 Ld SOIC T+R | 0.075 | 8 | 2 | 260 | RoHS |
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HIP2100IB | 8 Ld SOIC | 0.072 | 8 | 1 | 240 | |
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HIP2100IBT | 8 Ld SOIC T+R | 0.072 | 8 | 1 | 240 | |
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HIP2100IBZ | 8 Ld SOIC | 0.072 | 8 | 1 | 260 | RoHS |
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HIP2100IBZT | 8 Ld SOIC T+R | 0.072 | 8 | 1 | 260 | RoHS |
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HIP2100IR | 16 Ld QFN | 0.065 | 16 | | 240 | |
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HIP2100IR4 | 12 Ld DFN | 0.043 | 12 | 2 | 240 | |
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HIP2100IR4T | 12 Ld DFN T+R | 0.043 | 12 | 2 | 240 | |
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HIP2100IR4Z | 12 Ld DFN | 0.043 | 12 | 3 | 260 | RoHS |
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HIP2100IR4ZT | 12 Ld DFN T+R | 0.043 | 12 | 3 | 260 | RoHS |
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HIP2100IRT | 16 Ld QFN T+R | 0.065 | 16 | | 240 | |
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HIP2100IRZ | 16 Ld QFN | 0.065 | 16 | 3 | 260 | RoHS |
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HIP2100IRZT | 16 Ld QFN T+R | 0.065 | 16 | 3 | 260 | RoHS |
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HIP2100EIB | 8 Ld SOIC | 0.075 | 8 | 2 | 240 | |
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HIP2100EIBT | 8 Ld SOIC T+R | 0.075 | 8 | 2 | 240 | |
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HIP2100EVAL2 | | | | N/A | | |
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HIP2100EVAL | | | | N/A | | |
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