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The single event and total dose hardened pulse width modulators are designed to be used in high frequency, switching power supplies in either voltage or current-mode configurations. These designs include a precision voltage reference, a low power start-up circuit, a high frequency oscillator, a wide-band error amplifier, and a fast current-limit comparator.

The IS-1825ASRH, IS-1825BSRH, and IS-1825BSEH feature dual, alternating output operating from zero to less than 50% duty-cycle, while the ISL71823ASRH and ISL71823BSRH features dual, in-phase output operating from zero to less than 100% duty cycle. The “B” versions test the delay from clock out to PWM output switching after power has been applied to the modulator (t_PWM). The IS-1825BSEH is wafer-by-wafer acceptance tested to 50krad(Si) at a low dose rate of 10mrad(Si)/s.

Constructed with the Intersil Rad-hard Silicon Gate (RSG) dielectrically isolated BiCMOS process, these devices are immune to single event latch-up and have been specifically designed to provide a high level of immunity to single event transients. All specified parameters are guaranteed and tested for 300krad(Si) total dose performance.

Key Features

• Electrically screened to DLA SMD# 5962-02511
• QML qualified per MIL-PRF-38535 requirements
• EH version is wafer-by-wafer acceptance tested to 50krad(Si) (LDR)
• Radiation environment
  • High dose rate (50-300rad(Si)/s): 300krad(Si)
  • Low dose rate (0.01rad(Si)/s): 50krad(Si)
  • Latch-up immune: dielectrically isolated
  • SEU immune: LET = 35MeV/mg/cm2 (max)
• Oscillator frequency: 1MHz (max)
• High output drive current: 1A peak (typ)
• Low start-up current: 300µA (max)
• Undervoltage lockout
  • Start threshold: 8.8V (max)
  • Stop threshold: 7.6V (min)
  • Hysteresis: 300mV (min)
• Pulse-by-pulse current limiting
• Programmable leading edge blanking

Applications

• Voltage or current-mode switching power supplies
• Control of high current MOSFET drivers
• Motor speed and direction control