ISL6611A: Phase Doubler with Integrated Drivers and Phase Shedding Function

The ISL6611A utilizes Intersil’s proprietary Phase Doubler scheme to modulate two-phase power trains with single PWM input. It doubles the number of phases that Intersil’s ISL63xx multiphase controllers can support. At the same time, the PWM line can be pulled high to disable the corresponding phase or higher phase(s) when the enable pin (EN_PH) is pulled low. This simplifies the phase shedding implementation. For layout simplicity and improving system performance, the device integrates two 5V drivers (ISL6609) and current balance function.

The ISL6611A is designed to minimize the number of analog signals interfacing between the controller and drivers in high phase count and scalable applications. The common COMP signal, which is usually seen with conventional cascaded configuration, is not required; this improves noise immunity and simplifies the layout. Furthermore, the ISL6611A provides low part count and a low cost advantage over the conventional cascaded technique.

The IC is biased by a single low voltage supply (5V), minimizing driver switching losses in high MOSFET gate capacitance and high switching frequency applications. Bootstrapping of the upper gate driver is implemented via an internal low forward drop diode, reducing implementation cost, complexity, and allowing the use of higher performance, cost effective N-Channel MOSFETs. Adaptive shoot-through protection is integrated to prevent both MOSFETs from conducting simultaneously.

The ISL6611A features 4A typical sink current for the lower gate driver, enhancing the lower MOSFET gate hold-down capability during PHASE node rising edge, preventing power loss caused by the self turn-on of the lower MOSFET due to the high dV/dt of the switching node.

The ISL6611A also features an input that recognizes a high-impedance state, working together with Intersil multiphase PWM controllers to prevent negative transients on the controlled output voltage when operation is suspended. This feature eliminates the need for the Schottky diode that may be utilized in a power system to protect the load from negative output voltage damage.

In addition, the ISL6611A’s bootstrap function is designed to prevent the BOOT capacitor from overcharging, should excessively large negative swings occur at the transitions of the PHASE node.

Key Features
  • Proprietary Phase Doubler Scheme with Phase Shedding Function (Patent Pending)
    • Enhanced Light to Full Load Efficiency
  • Patented Current Balancing with rDS(ON) Current Sensing and Adjustable Gain
  • Quad MOSFET Drives for Two Synchronous Rectified Bridge with Single PWM Input
  • Channel Synchronization and Interleaving Options
  • Adaptive Zero Shoot-Through Protection
  • 0.4Ω On-Resistance and 4A Sink Current Capability
  • 36V Internal Bootstrap Schottky Diode
  • Bootstrap Capacitor Overcharging Prevention (ISL6611A)
  • Supports High Switching Frequency (Up to 1MHz)
    • Fast Output Rise and Fall
  • Tri-State PWM Input for Output Stage Shutdown
  • Phase Enable Input and PWM Forced High Output to Interface with Intersil’s Controller for Phase Shedding
  • QFN Package
    • Compliant to JEDEC PUB95 MO-220 QFN-Quad Flat No Leads-Product Outline
    • Near Chip-Scale Package Footprint; Improves PCB Utilization, Thinner Profile
    • Pb-Free (RoHS Compliant)
Applications
  • High Current Low Voltage DC/DC Converters
  • High Frequency and High Efficiency VRM and VRD
  • High Phase Count and Phase Shedding Applications
Typical Diagram
Application Notes
TitleTypeUpdatedSizeOther Languages
AN1116: Elantec CMOS applicationsPDF13 Nov 2014231 KB
Datasheets
TitleTypeUpdatedSizeOther Languages
ISL6611A DatasheetPDF17 Nov 2014221 KB
Tech Briefs
TitleTypeUpdatedSizeOther Languages
TB363: Guidelines for Handling and Processing Moisture Sensitive Surface Mount Devices (SMDs)PDF13 Jan 201529 KB
White Papers
TitleTypeUpdatedSizeOther Languages
Five Easy Steps to Create a Multi-Load Power SolutionPDF30 Jan 2017502 KB
Order Information
Part NumberPackage TypeWeight(g)PinsMSL RatingPeak Temp (°C)RoHS Status
ISL6611ACRZ16 Ld QFN0.043161260RoHS
ISL6611ACRZ-T16 Ld QFN T+R0.043161260RoHS
ISL6611AIRZ16 Ld QFN0.043161260RoHS
ISL6611AIRZ-T16 Ld QFN T+R0.043161260RoHS
ISL6611A Datasheet 17 Nov 2014
16 Ld QFN T+R ISL43145
ISL6611A
AN1116: Elantec CMOS applications 13 Nov 2014
TB363: Guidelines for Handling and Processing Moisture Sensitive Surface Mount Devices (SMDs) 13 Jan 2015
Five Easy Steps to Create a Multi-Load Power Solution 30 Jan 2017