ISL6612B: Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP

The ISL6612B and ISL6613B are high frequency MOSFET drivers specifically designed to drive upper and lower power N-Channel MOSFETs in a synchronous rectified buck converter topology. These drivers combined with HIP63xx or ISL65xx Multi-Phase Buck PWM controllers and N-Channel MOSFETs form complete core-voltage regulator solutions for advanced microprocessors.

The ISL6612B drives the upper gate to above rising VCC POR (7V), while the lower gate can be independently driven over a range from 5V to 12V. The ISL6613B drives both upper and lower gates over a range of 5V to 12V. This drive voltage provides the flexibility necessary to optimize applications involving trade-offs between gate charge and conduction losses. These drivers are optimized for POL DC/DC Converters for IBA Systems.

An advanced adaptive zero shoot-through protection is integrated to prevent both the upper and lower MOSFETs from conducting simultaneously and to minimize the dead time. These products add an overvoltage protection feature operational before VCC exceeds its turn-on threshold, at which the PHASE node is connected to the gate of the low side MOSFET (LGATE). The output voltage of the converter is then limited by the threshold of the low side MOSFET, which provides some protection to the microprocessor if the upper MOSFET(s) is shorted during initial start-up.

These drivers also feature a three-state PWM input which, working together with Intersil’s multi-phase PWM controllers, prevents a negative transient on the output voltage when the output is shut down. This feature eliminates the Schottky diode that is used in some systems for protecting the load from reversed output voltage events.

Key Features
  • Pin-to-pin Compatible with HIP6601 SOIC family
  • Dual MOSFET Drives for Synchronous Rectified Bridge
  • Low VCC Rising Threshold (7V) for IBA Applications.
  • Advanced Adaptive Zero Shoot-Through Protection
    • Body Diode Detection
    • Auto-zero of rDS(ON) Conduction Offset Effect
  • Adjustable Gate Voltage (5V to 12V) for Optimal Efficiency
  • 36V Internal Bootstrap Schottky Diode
  • Bootstrap Capacitor Overcharging Prevention
  • Supports High Switching Frequency (up to 2MHz)
    • 3A Sinking Current Capability
    • Fast Rise/Fall Times and Low Propagation Delays
  • Three-State PWM Input for Output Stage Shutdown
  • Three-State PWM Input Hysteresis for Applications With Power Sequencing Requirement
  • Pre-POR Overvoltage Protection
  • VCC Undervoltage Protection
  • Expandable Bottom Copper Pad for Enhanced Heat Sinking
  • Dual Flat No-Lead (DFN) Package
    • Near Chip-Scale Package Footprint; Improves PCB Efficiency and Thinner in Profile
  • Pb-Free (RoHS Compliant)
Applications
  • Optimized for POL DC/DC Converters for IBA Systems
  • Core Regulators for Intel® and AMD® Microprocessors
  • High Current DC/DC Converters
  • High Frequency and High Efficiency VRM and VRD
Typical Diagram
Application Notes
TitleTypeUpdatedSizeOther Languages
AN1116: Elantec CMOS applicationsPDF13 Nov 2014231 KB
Datasheets
TitleTypeUpdatedSizeOther Languages
ISL6612B, ISL6613B DatasheetPDF17 Nov 2014202 KB
Tech Briefs
TitleTypeUpdatedSizeOther Languages
TB363: Guidelines for Handling and Processing Moisture Sensitive Surface Mount Devices (SMDs)PDF13 Jan 201529 KB
TB458: Converting a Fixed PWM to an Adjustable PWMPDF19 Nov 2014147 KB
TB417: Designing Stable Compensation Networks for Single Phase Voltage Mode Buck RegulatorsPDF19 Nov 2014206 KB
White Papers
TitleTypeUpdatedSizeOther Languages
Five Easy Steps to Create a Multi-Load Power SolutionPDF30 Jan 2017502 KB
Order Information
Part NumberPackage TypeWeight(g)PinsMSL RatingPeak Temp (°C)RoHS Status
ISL6612BCB8 Ld SOIC0.0728240
ISL6612BCB-T8 Ld SOIC T+R0.0728240
ISL6612BCBZ8 Ld SOIC0.07683260RoHS
ISL6612BCBZ-T8 Ld SOIC T+R0.07683260RoHS
ISL6612BCR10 Ld DFN0.02210240
ISL6612BCR-T10 Ld DFN T+R0.02210240
ISL6612BCRZ10 Ld DFN0.022103260RoHS
ISL6612BCRZ-T10 Ld DFN T+R0.022103260RoHS
ISL6612BECB8 Ld SOIC0.0758240
ISL6612BECB-T8 Ld SOIC T+R0.0758240
ISL6612BECBZ8 Ld SOIC0.07583260RoHS
ISL6612BECBZ-T8 Ld SOIC T+R0.07583260RoHS
ISL6612BEIB8 Ld SOIC0.0758240
ISL6612BEIB-T8 Ld SOIC T+R0.0758240
ISL6612BEIBZ8 Ld SOIC0.07583260RoHS
ISL6612BEIBZ-T8 Ld SOIC T+R0.07583260RoHS
ISL6612BIB8 Ld SOIC0.0728240
ISL6612BIB-T8 Ld SOIC T+R0.0728240
ISL6612BIBZ8 Ld SOIC0.07683260RoHS
ISL6612BIBZ-T8 Ld SOIC T+R0.07683260RoHS
ISL6612BIR10 Ld DFN0.02210240
ISL6612BIR-T10 Ld DFN T+R0.02210240
ISL6612BIRZ10 Ld DFN0.022102260RoHS
ISL6612BIRZ-T10 Ld DFN T+R0.022102260RoHS
ISL6612B, ISL6613B Datasheet 17 Nov 2014
8 Ld SOIC T+R ISL84514
10 Ld DFN T+R ISL9203A
8 Ld SOIC T+R ISL6613A
ISL6613B
AN1116: Elantec CMOS applications 13 Nov 2014
TB363: Guidelines for Handling and Processing Moisture Sensitive Surface Mount Devices (SMDs) 13 Jan 2015
TB458: Converting a Fixed PWM to an Adjustable PWM 19 Nov 2014
TB417: Designing Stable Compensation Networks for Single Phase Voltage Mode Buck Regulators 19 Nov 2014
Five Easy Steps to Create a Multi-Load Power Solution 30 Jan 2017