产品特性

• Organized as 4M x16
• Single Voltage Read and Write Operations– 2.7-3.6V
• Superior Reliability– Endurance: up to 100,000 Cycles minimum– Greater than 100 years Data Retention
• Low Power Consumption (typical values at 5 MHz)– Active Current: 4 mA (typical)– Standby Current: 3 µA (typical)– Auto Low Power Mode: 3 µA (typical)
• 128-bit Unique ID
• Security-ID Feature– 256 Word, user One-Time-Programmable
• Protection and Security Features– Hardware Boot Block Protection/WP# Input Pin,Uniform (32 KWord) and Non-Uniform (8 KWord)options available– User-controlled individual block (32 KWord) protection,using software only methods– Password protection
• Hardware Reset Pin (RST#)
• Fast Read and Page Read Access Times:– 90 ns Read access time– 25 ns Page Read access times- 4-Word Page Read buffer
• Latched Address and Data
• Fast Erase Times:– Sector-Erase Time: 18 ms (typical)– Block-Erase Time: 18 ms (typical)– Chip-Erase Time: 40 ms (typical)
• Erase-Suspend/-Resume Capabilities
• Fast Word and Write-Buffer ProgrammingTimes:– Word-Program Time: 7 µs (typical)– Write Buffer Programming Time: 1.75 µs / Word(typical)- 16-Word Write Buffer
• Automatic Write Timing– Internal VPP Generation
• End-of-Write Detection– Toggle Bits– Data# Polling– RY/BY# Output
• CMOS I/O Compatibility
• JEDEC Standard– Flash EEPROM Pinouts and command sets
• CFI Compliant
• Packages Available– 48-lead TSOP– 48-ball TFBGA
• All non-Pb (lead-free) devices are RoHS compliant

技术参数