产品特性

• Organized as 512K x16
• Single Voltage Read and Write Operations– 3.0-3.6V for SST39LF800A
• Superior Reliability– Endurance: 100,000 Cycles (typical)– Greater than 100 years Data Retention
• Low Power Consumption(typical values at 14 MHz)– Active Current: 9 mA (typical)– Standby Current: 3 µA (typical)
• Sector-Erase Capability– Uniform 2 KWord sectors
• Block-Erase Capability– Uniform 32 KWord blocks
• Fast Read Access Time– 55 ns for SST39LF800A
• Latched Address and Data
• Fast Erase and Word-Program– Sector-Erase Time: 18 ms (typical)– Block-Erase Time: 18 ms (typical)– Chip-Erase Time: 70 ms (typical)– Word-Program Time: 14 µs (typical)– Chip Rewrite Time:8 seconds (typical) for SST39LF800A
• Automatic Write Timing– Internal VPP Generation
• End-of-Write Detection– Toggle Bit– Data# Polling
• CMOS I/O Compatibility
• JEDEC Standard– Flash EEPROM Pinouts and command sets
• Packages Available– 48-lead TSOP (12mm x 20mm)– 48-ball TFBGA (6mm x 8mm)– 48-ball WFBGA (4mm x 6mm)– 48-bump XFLGA (4mm x 6mm) – 4 and 8Mbit
• All non-Pb (lead-free) devices are RoHS compliant

技术参数