产品特性

• Organized as 128K x8 / 256K x8 / 512K x8
• Single 4.5-5.5V Read and Write Operations
• Superior Reliability– Endurance: 100,000 Cycles (typical)– Greater than 100 years Data Retention
• Low Power Consumption(typical values at 14 MHz)– Active Current: 10 mA (typical)– Standby Current: 30 µA (typical)
• Sector-Erase Capability– Uniform 4 KByte sectors
• Fast Read Access Time:– 55 ns– 70 ns
• Latched Address and Data
• Automatic Write Timing– Internal VPP Generation
• Fast Erase and Byte-Program– Sector-Erase Time: 18 ms (typical)– Chip-Erase Time: 70 ms (typical)– Byte-Program Time: 14 µs (typical)– Chip Rewrite Time:2 seconds (typical) for SST39SF010A4 seconds (typical) for SST39SF020A8 seconds (typical) for SST39SF040
• End-of-Write Detection– Toggle Bit– Data# Polling
• TTL I/O Compatibility
• JEDEC Standard– Flash EEPROM Pinouts and command sets
• Packages Available– 32-lead PLCC– 32-lead TSOP (8mm x 14mm)– 32-pin PDIP
• All devices are RoHS compliant
• All non-Pb (lead-free) devices are RoHS compliant

技术参数