AFT23S160W02S: 2300-2400 MHz，45 W平均值，28 V Airfast LDMOS射频功率晶体管 _ BDTIC 中国领先电子元器件代理商

AFT23S160W02S: 2300-2400 MHz，45 W平均值，28 V Airfast LDMOS射频功率晶体管

特性

专为宽瞬时带宽应用而设计
增大负栅源电压范围，改善C类放大器运行
可承受极高的输出VSWR和宽带运行条件
为Doherty应用进行了优化
符合RoHS规范
采用盘卷包装。R3后缀 = 250 个，56 mm卷带宽度，13英寸卷盘。

NI-780S-2L, NI-780GS-2L Package Image

数据手册 (1)

名称/描述	Modified Date
AFT23S160W02SR3, AFT23S160W02GSR3 2300-2400 MHz, 45 W Avg., 28 V Airfast® RF Power LDMOS Transistors -... (REV 0) PDF (281.0 kB) AFT23S160W02S [English]	06 Nov 2013

应用说明 (1)

名称/描述	Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 [English]	29 Apr 2014

工程设计要点 (1)

名称/描述	Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 [English]	19 Jan 2004

选型工具指南 (1)

名称/描述	Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 [English]	26 May 2016

封装信息 (2)

名称/描述	Modified Date
98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins (REV J) PDF (43.5 kB) 98ASB16718C [English]	22 Mar 2016
98ASA00193D, NI-C, 20.57x9.78x3.81, Pitch 14.1, 3 Pins (REV C) PDF (46.9 kB) 98ASA00193D [English]	26 Feb 2016

印刷电路板

AFT23S160W02SR3, AFT23S160W02GSR3 PCB DXF file (REV 1) ZIP AFT23S160W02S_PCB 10/28/2013

订购信息

型号	状态	Frequency Min (Min) (MHz)	Frequency Max (Max) (MHz)	供电电压 (Typ) (V)	P1dB (Typ) (dBm)	P1dB (Typ) (W)	输出功率 (Typ) (W) @ Intermodulation Level at Test Signal	测试信号	功率增益 (Typ) (dB) @ f (MHz)	效率 (Typ) (%)	热阻 (Spec)(°C/W)	匹配	类型	模具技术
AFT23S160W02SR3	Active	2300	2400	28	51.9	155	45 @ AVG	W-CDMA	17.9 @ 2400	30.3	0.53	I/O	AB	LDMOS
AFT23S160W02GSR3	Active	2300	2400	28	51.9	155	45 @ AVG	W-CDMA	17.9 @ 2400	30.3	0.53	I/O	AB	LDMOS

封装环保信息

封装说明	Outline Version	包装	产品状态	部件编号	化学成分	RoHS / Pb Free中国RoHS查询	PPT (°C)
NI-780S-2	98ASB16718C	MPQ - 250 REELPOQ - 250 REEL	Active	AFT23S160W02SR3	AFT23S160W02SR3.pdf		260
NI-780GS-2L	98ASA00193D	MPQ - 250 REELPOQ - 250 REEL	Active	AFT23S160W02GSR3	AFT23S160W02GSR3.pdf		260

AFT23S160W02SR3, AFT23S160W02GSR3 2300-2400 MHz, 45 W Avg., 28 V Airfast® RF Power LDMOS Transistors -... AFT23S160W02S

AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H

Using Data Sheet Impedances for RF LDMOS Devices mrf1570n

RF Products Selector Guide MMT20303H

AFT23S160W02SR3, AFT23S160W02GSR3 PCB DXF file AFT23S160W02S

98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins MMRF1011H

AFT23S160W02SR3.pdf AFT23S160W02S

98ASA00193D, NI-C, 20.57x9.78x3.81, Pitch 14.1, 3 Pins mrf6v12500h

AFT23S160W02GSR3.pdf AFT23S160W02S

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