AFT23S160W02S: 2300-2400 MHz, 45 W Avg., 28 V Airfast® RF Power LDMOS Transistors
NI-780S-2L, NI-780GS-2L Package Image
特性
- Designed for Wide Instantaneous Bandwidth Applications
- Greater Negative Gate-Source Voltage Range for Improved Class C Operation
- Able to Withstand Extremely High Output VSWR and Broadband Operating Conditions
- Optimized for Doherty Applications
- RoHS Compliant
- In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13-inch Reel.
Data Sheets (1)
| Name/Description | Modified Date |
|---|---|
| AFT23S160W02SR3, AFT23S160W02GSR3 2300-2400 MHz, 45 W Avg., 28 V Airfast® RF Power LDMOS Transistors -... (REV 0) PDF (281.0 kB) AFT23S160W02S | 06 Nov 2013 |
Application Notes (1)
| Name/Description | Modified Date |
|---|---|
| AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 | 29 Apr 2014 |
Engineering Bulletins (1)
| Name/Description | Modified Date |
|---|---|
| Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 | 19 Jan 2004 |
Selector Guides (1)
| Name/Description | Modified Date |
|---|---|
| RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 | 26 May 2016 |
Package Information (2)
| Name/Description | Modified Date |
|---|---|
| 98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins (REV J) PDF (43.5 kB) 98ASB16718C | 22 Mar 2016 |
| 98ASA00193D, NI-C, 20.57x9.78x3.81, Pitch 14.1, 3 Pins (REV C) PDF (46.9 kB) 98ASA00193D | 26 Feb 2016 |
Printed Circuit Boards
- AFT23S160W02SR3, AFT23S160W02GSR3 PCB DXF file (REV 1) ZIP AFT23S160W02S_PCB 10/28/2013
Ordering Information
| Product | Status | Frequency Min (Min) (MHz) | Frequency Max (Max) (MHz) | Supply Voltage (Typ) (V) | P1dB (Typ) (dBm) | P1dB (Typ) (W) | Output Power (Typ) (W) @ Intermodulation Level at Test Signal | Test Signal | Power Gain (Typ) (dB) @ f (MHz) | Efficiency (Typ) (%) | Thermal Resistance (Spec)(°C/W) | Matching | Class | Die Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| AFT23S160W02SR3 | Active | 2300 | 2400 | 28 | 51.9 | 155 | 45 @ AVG | W-CDMA | 17.9 @ 2400 | 30.3 | 0.53 | I/O | AB | LDMOS |
| AFT23S160W02GSR3 | Active | 2300 | 2400 | 28 | 51.9 | 155 | 45 @ AVG | W-CDMA | 17.9 @ 2400 | 30.3 | 0.53 | I/O | AB | LDMOS |
Package Information
| Package Description | Outline Version | Packing | Product Status | Part Number | Chemical Content | RoHS / Pb FreeChina RoHS Lookup | PPT (°C) |
|---|---|---|---|---|---|---|---|
| NI-780S-2 | 98ASB16718C | MPQ - 250 REELPOQ - 250 REEL | Active | AFT23S160W02SR3 | AFT23S160W02SR3.pdf |   | 260 |
| NI-780GS-2L | 98ASA00193D | MPQ - 250 REELPOQ - 250 REEL | Active | AFT23S160W02GSR3 | AFT23S160W02GSR3.pdf | | 260 |
- AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
- Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
- RF Products Selector Guide MMT20303H
- AFT23S160W02SR3, AFT23S160W02GSR3 PCB DXF file AFT23S160W02S
- 98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins MMRF1011H
- AFT23S160W02SR3.pdf AFT23S160W02S
- 98ASA00193D, NI-C, 20.57x9.78x3.81, Pitch 14.1, 3 Pins mrf6v12500h
- AFT23S160W02GSR3.pdf AFT23S160W02S
