RF Cellular Infrastructure

450 - 1000 MHz
  • A2I08H040N: 728-960 MHz, 9 W Avg., 28 V Airfast® RF LDMOS Wideband Integrated Power Amplifiers
  • A2T07D160W04S: 716-960 MHz, 30 W Avg., 28 V Airfast® RF Power LDMOS Transistor
  • A2T07H310-24S: 716-960 MHz, 47 W Avg., 28 V Airfast® RF Power LDMOS Transistor
  • A2T08VD020N: 728-960 MHz, 2 W Avg., 48 V Airfast® RF Power LDMOS Transistor
  • A2T09D400-23N: 716-960 MHz, 93 W Avg., 28 V Airfast® RF Power LDMOS Transistor
  • A2T09VD250N: 716-960 MHz, 65 W Avg, 48 V Airfast® RF Power LDMOS Transistor
  • A2T09VD300N: 716-960 MHz, 79 W Avg, 48 V Airfast® RF Power LDMOS Transistor
  • A2V09H300-04N: 720-960 MHz, 79 W Avg., 48 V Airfast® RF Power LDMOS Transistor
  • AFT09H310-03S: 920-960 MHz, 56 W Avg., 28 V Airfast® RF Power LDMOS Transistors
  • AFT09S200W02N: 716-960 MHz, 56 W Avg., 28 V Airfast® RF Power LDMOS Transistors
  • AFT09S200W02S: 920-960 MHz, 56 W Avg., 28 V Airfast® RF Power LDMOS Transistor
  • AFT09S220-02N: 850-960 MHz, 54 W Avg, 28 V Airfast® RF Power LDMOS Transistor
  • AFT09S282N: 720-960 MHz, 80 W Avg., 28 V Airfast® RF Power LDMOS Transistor
  • AFT27S006N: 100-3600 MHz, 28.8 dBm Avg., 28 V Airfast® RF Power LDMOS Transistor
  • AFT27S010N: 100-3600 MHz, 1.26 W Avg., 28 V Airfast® RF Power LDMOS Transistor
  • AFV09P350-04N: 720-960 MHz, 100 W Avg., 48 V Airfast® RF Power LDMOS Transistors
  • MD8IC925N: 728-960 MHz, 2.5 W Avg., 28 V RF LDMOS Wideband Integrated Power Amplifiers
  • MD8IC970N: 850-940 MHz, 35 W Avg., 28 V RF LDMOS Wideband Integrated Power Amplifiers
  • MDE6IC9120N: 920-960 MHz, 25 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers
  • MRF5S9070NR1: 880 MHz, 70 W, 26 V Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET
  • MRF5S9080N: 869-960 MHz, 80 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs
  • MRF8P8300H: 790-820 MHz, 96 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs
  • MRF8P9040N: 728-960 MHz, 4.0 W Avg., 28 V CDMA, W-CDMA, LTE RF Power LDMOS Transistors
  • MRF8P9210N: 920-960 MHz, 63 W Avg., 28 V Single W-CDMA RF Power LDMOS Transistor
  • MRF8P9300H: 920-960 MHz, 100 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs
  • MRF8S7120N: 728-768 MHz, 32 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET
  • MRF8S7170N: 618-803 MHz, 50 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET
  • MRF8S7235N: 728-768 MHz, 63 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET
  • MRF8S9100H: 920-960 MHz, 72 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs
  • MRF8S9102N: 865-960 MHz, 28 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET
  • MRF8S9120N: 865-960 MHz, 33 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET
  • MRF8S9170N: 920-960 MHz, 50 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET
  • MRF8S9200N: 920-960 MHz, 58 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET
  • MRF8S9202N: 920-960 MHz, 58 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET
  • MRF8S9220H: 920-960 MHz, 65 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs
  • MRF8S9232N: 865-960 MHz, 63 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET
  • MRF8S9260H: 920-960 MHz, 75 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs
  • MRF9030L: 945 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs
  • MRF9030N: 945 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs
  • MRF9060L: 945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs
  • MRFE6S8046N: 864-894 MHz, 35.5 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs
  • MRFE6S9045NR1: 865-960 MHz, 10 W Avg., 28 V Broadband RF Power LDMOS Transistor
  • MRFE6S9046N: 920-960 MHz, 35.5 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs
  • MRFE6S9060NR1: 470-960 MHz, 14 W Avg., 28 V, Broadband RF Power LDMOS Transistor
  • MRFE6S9125N: 865-960 MHz, 27 W Avg., 28 V, N-CDMA, GSM EDGE RF Power LDMOS Transistors
  • MRFE6S9135H: 940 MHz, 39 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs
  • MRFE6S9160H: 865-960 MHz, 35 W Avg., 28 V, Single N-CDMA Lateral N-Channel RF Power MOSFETs
  • MRFE6S9205H: 880 MHz, 58 W Avg., 28 V, Single W-CDMA Lateral N-Channel RF Power MOSFETs
  • MW4IC915N: 860-960 MHz, 15 W, 26 V GSM/GSM EDGE, N-CDMA RF LDMOS Wideband Integrated Power Amplifiers
  • MW6S004NT1: 1-2000 MHz, 4 W, 28 V Lateral N-Channel RF Power MOSFET
  • MW6S010N: 450-1500 MHz, 10 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs
  • MW7IC008N: 100-1000 MHz, 8 W Peak, 28 V RF LDMOS Wideband Integrated Power Amplifier
  • MW7IC915N: 728-960 MHz, 1.6 W Avg., 28 V RF LDMOS Wideband Integrated Power Amplifier
  • MW7IC930N: 728-768 MHz, 920-960 MHz, 3.2 W Avg., 28 V RF LDMOS Wideband Integrated Power Amplifiers
  • MWE6IC9080N: 865-960 MHz, 80 W CW, 28 V GSM/EDGE RF LDMOS Wideband Integrated Amplifiers
  • MWE6IC9100N: 865-960 MHz, 100 W, 26 V GSM/GSM EDGE RF LDMOS Wideband Integrated Amplifiers
  • MWIC930N: 746-960 MHz, 30 W, 26-28 V Single N-CDMA, GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifiers
1450 - 2200 MHz
  • A2G22S160-01S: 1800-2200 MHz, 32 W Avg., 48 V Airfast® RF Power GaN Transistor
  • A2G22S251-01S: 1805-2200 MHz, 48 W Avg., 48 V Airfast® RF Power GaN Transistor
  • A2I20D020N: 1400-2200 MHz, 2.5 W Avg., 28 V Wideband Integrated RF LDMOS Amplifier
  • A2I20D040N: 1400-2200 MHz, 5 W Avg., 28 V Wideband Integrated RF LDMOS Amplifier
  • A2I20H060N: 1800-2200 MHz, 12 W Avg., 28 V Airfast® Wideband Integrated RF LDMOS Amplifiers
  • A2I20H080N: 1800-2200 MHz, 13.5 W Avg., 30 V Airfast® Wideband Integrated RF LDMOS Amplifier
  • A2I22D050N: 1800-2200 MHz, 5.3 W Avg., 28 V Airfast® RF LDMOS Wideband Integrated Amplifiers
  • A2T18H100-25S: 1805-1995 MHz, 18 W Avg., 28 V Airfast® RF Power LDMOS Transistor
  • A2T18H160-24S: 1805-1880 MHz, 28 W Avg., 28 V Airfast® RF Power LDMOS Transistor
  • A2T18H410-24S: 1805-1880 MHz, 71 W Avg., 28 V Airfast® RF Power LDMOS Transistor
  • A2T18H450W19S: 1805-1880 MHz, 89 W Avg., 30 V Airfast® RF Power LDMOS Transistor
  • A2T18H455W23N: 1805-1880 MHz, 87 W Avg., 31.5 V Airfast® RF Power LDMOS Transistor
  • A2T18S160W31S: 1805-1995 MHz, 32 W Avg., 28 V Airfast® RF Power LDMOS Transistors
  • A2T18S162W31S: 1805-1880 MHz, 32 W Avg., 28 V Airfast® RF Power LDMOS
  • A2T18S165-12S: 1805-1995 MHz, 38 W Avg., 28 V Airfast® RF Power LDMOS Transistor
  • A2T18S260-12S: 1805-1995 MHz, 50 W Avg., 28 V Airfast® RF Power LDMOS Transistor
  • A2T18S260W12N: 1805-1880 MHz, 56 W Avg., 28 V Airfast® RF Power LDMOS Transistor
  • A2T20H160W04N: 1880-2025 MHz, 28 W Avg., 28 V Airfast® RF Power LDMOS Transistor
  • A2T20H330W24N: 1880-2025 MHz, 55 W Avg., 28 V Airfast® RF Power LDMOS Transistor
  • A2T20H330W24S: 1880-2025 MHz, 58 W Avg., 28 V Airfast® RF Power LDMOS Transistor
  • A2T21H100-25S: 2110-2170 MHz, 18 W Avg., 28 V Airfast® RF Power LDMOS Transistor
  • A2T21H360-23N: 2110-2200 MHz, 63 W Avg., 28 V Airfast® RF Power LDMOS Transistor
  • A2T21H360-24S: 2110-2170 MHz, 63 W Avg., 28 V Airfast® RF Power LDMOS Transistor
  • A2T21H410-24S: 2110-2170 MHz, 72 W Avg., 28 V Airfast® RF Power LDMOS Transistor
  • A2T21H450W19S: 2110-2200 MHz, 89 W Avg., 30 V Airfast® RF Power LDMOS Transistor
  • A2T21S160-12S: 2110-2170 MHz, 38 W Avg., 28 V Airfast® RF Power LDMOS Transistor
  • A2T21S260-12S: 2110-2170 MHz, 65 W Avg., 28 V Airfast® RF Power LDMOS Transistor
  • A3T18H360W23S: 1805-1880 MHz, 56 W Avg., 28 V Airfast® RF Power LDMOS Transistor
  • A3T18H450W23S: 1805-1880 MHz, 89 W Avg., 31 V Airfast® RF Power LDMOS Transistor
  • A3T21H450W23S: 2110-2200 MHz, 89 W Avg., 31 V Airfast® RF Power LDMOS Transistor
  • AFT18H356-24S: 1805-1995 MHz, 63 W Avg., 28 V Airfast® RF Power LDMOS Transistor
  • AFT18H357-24N: 1805-1880 MHz, 63 W Avg., 28 V Airfast® RF Power LDMOS Transistor
  • AFT18H357-24S: 1805-1995 MHz, 63 W Avg., 28 V Airfast® RF Power LDMOS Transistor
  • AFT18HW355S: 1805-1880 MHz, 63 W Avg., 28 V Airfast® RF Power LDMOS Transistor
  • AFT18P350-4S2L: 1805-1880 MHz, 63 W Avg., 28 V Airfast® RF Power LDMOS Transistor
  • AFT18S230-12N: 1805-1880 MHz, 50 W Avg., 28 V Airfast® RF Power LDMOS Transistor
  • AFT18S230S: 1805-1880 MHz, 50 W Avg., 28 V Airfast® RF Power LDMOS Transistor
  • AFT18S260W31S: 1805-1995 MHz 50 W Avg., 28 V Airfast® RF Power LDMOS Transistors
  • AFT18S290-13S: 1805-1995 MHz 63 W Avg., 28 V Airfast® RF Power LDMOS Transistor
  • AFT20P060-4N: 1805-2170 MHz 6.3 W Avg., 28 V Airfast® RF Power LDMOS Transistors
  • AFT20P140-4WN: 1880-2025 MHz, 24 W Avg., 28 V Airfast® RF Power LDMOS Transistors
  • AFT20S015N: 100-3600 MHz 1.5 W Avg., 28 V Airfast® RF Power LDMOS Transistors
  • AFT21H350W03S: 2110-2170 MHz, 63 W Avg., 28 V Airfast® RF Power LDMOS Transistors
  • AFT21S140W02S: 2110-2170 MHz, 32 W Avg., 28 V Airfast® RF Power LDMOS Transistors
  • AFT21S220W02S: 2110-2170 MHz, 50 W Avg., 28 V Airfast® RF Power LDMOS Transistors
  • AFT21S230-12S: 2110-2170 MHz, 50 W Avg., 28 V Airfast® RF Power LDMOS Transistor
  • AFT21S230S: 2110-2170 MHz, 50 W Avg., 28 V Airfast® RF Power LDMOS Transistor
  • AFT21S232S: 2110-2170 MHz, 50 W Avg., 28 V Airfast® RF Power LDMOS Transistor
  • AFT21S240-12S: 2110-2170 MHz, 55 W Avg., 28 V Airfast® RF Power LDMOS Transistor
  • AFT27S006N: 100-3600 MHz, 28.8 dBm Avg., 28 V Airfast® RF Power LDMOS Transistor
  • AFT27S010N: 100-3600 MHz, 1.26 W Avg., 28 V Airfast® RF Power LDMOS Transistor
  • MD7IC1812N: 1805-2170 MHz, 1.3 W Avg., 28 V Single W-CDMA RF LDMOS Wideband Integrated Power Amplifiers
  • MD7IC2012N: 1805-2170 MHz, 1.3 W Avg., 28 V RF LDMOS Wideband Integrated Power Amplifiers
  • MD7IC2050N: 1880-2025 MHz, 10 W Avg., 28 V RF LDMOS Wideband Integrated Power Amplifiers
  • MD7IC2250N: 2110-2170 MHz, 5.3 W Avg., 28 V RF LDMOS Wideband Integrated Power Amplifiers
  • MD7IC2251N: 2110-2170 MHz, 12 W Avg., 28 V RF LDMOS Wideband Integrated Power Amplifiers
  • MD7P19130H: 1930-1990 MHz, 40 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs
  • MRF5P21045NR1: 2110-2170 MHz, 10 W Avg., 28 V, 2 x W-CDMA, Dual Path Lateral N-Channel RF Power MOSFET
  • MRF5S19060N: 1930-1990 MHz, 12 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
  • MRF6S18060N: 1800-2000 MHz, 60 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs
  • MRF6S19060N: 1930-1990 MHz, 12 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
  • MRF6S19140H: 1930-1990 MHz, 29 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
  • MRF6S20010N: 1600-2200 MHz, 10 W, 28 V, GSM/EDGE, N-CDMA, W-CDMA RF Power LDMOS Transistors
  • MRF7P20040H: 2010-2025 MHz, 10 W Avg., 32 V Single W-CDMA Lateral N-Channel RF Power MOSFETs
  • MRF7S16150H: 1600-1660 MHz, 32 W Avg., 28 V WiMAX Lateral N-Channel RF Power MOSFETs
  • MRF7S18170H: 1805-1880 MHz, 50 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs
  • MRF7S19120NR1: 1930-1990 MHz, 36 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET
  • MRF7S19170H: 1930-1990 MHz, 50 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs
  • MRF7S21080H: 2110-2170 MHz, 22 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs
  • MRF7S21110H: 2110-2170 MHz, 33 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs
  • MRF7S21150H: 2110-2170 MHz, 44 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs
  • MRF8HP21080H: 2110-2170 MHz, 16 W Avg., 28 V W-CDMA, LTE Lateral N-Channel RF Power MOSFETs
  • MRF8P20100H: 1805-2025 MHz, 20 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs
  • MRF8P20140WH: 1880-2025 MHz, 24 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs
  • MRF8P20160H: 1880-2025 MHz, 37 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs
  • MRF8P20161H: 1880-1920 MHz, 37 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET
  • MRF8P20165WH: 1930-1995 MHz, 37 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs
  • MRF8S18120H: 1805-1880 MHz, 72 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs
  • MRF8S18210WHS: 1805-1995 MHz, 50 W Avg., 30 V Single W-CDMA Lateral N-Channel RF Power MOSFETs
  • MRF8S18260H: 1805-1880 MHz, 74 W Avg., 30 V Single W-CDMA Lateral N-Channel RF Power MOSFETs
  • MRF8S21100H: 2110-2170 MHz, 24 W Avg., 28 V W-CDMA, LTE RF Power LDMOS Transistors
  • MRF8S21120H: 2110-2170 MHz, 28 W Avg., 28 V W-CDMA, LTE Lateral N-Channel RF Power MOSFETs
  • MRF8S21200H: 2110-2170 MHz, 48 W Avg., 28 V W-CDMA, LTE Lateral N-Channel RF Power MOSFETs
  • MW4IC2020N: 1805-1990 MHz, 20 W, 26 V, GSM/GSM EDGE, CDMA RF LDMOS Wideband Integrated Power Amplifiers
  • MW5IC2030N: 1930-1990 MHz, 30 W, 26 V GSM/GSM EDGE, W-CDMA, PHS RF LDMOS Wideband Integrated Power Amplifiers
  • MW6IC1940N: 1920-2000 MHz, 40 W, 28 V RF LDMOS Wideband Integrated Power Amplifiers
  • MW6IC2015N: 1805-1990 MHz, 15 W, 26 V GSM/GSM EDGE, CDMA RF LDMOS Wideband Integrated Power Amplifiers
  • MW6S004NT1: 1-2000 MHz, 4 W, 28 V Lateral N-Channel RF Power MOSFET
  • MW6S010N: 450-1500 MHz, 10 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs
  • MW7IC18100N: 1990 MHz, 100 W, 28 V GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifiers
  • MW7IC2020N: 1805-2170 MHz, 2.4 W Avg., 28 V RF LDMOS Wideband Integrated Power Amplifier
  • MW7IC2040N: Wideband Integrated Power Amplifiers
  • MW7IC2220N: 2110-2170 MHz, 2 W Avg., 28 V RF LDMOS Wideband Integrated Power Amplifiers
  • MW7IC2240N: 2110-2170 MHz, 4 W Avg., 28 V RF LDMOS Wideband Integrated Power Amplifiers
2300 - 2690 MHz
  • A2G22S160-01S: 1800-2200 MHz, 32 W Avg., 48 V Airfast® RF Power GaN Transistor
  • A2G26H281-04S: 2496-2690 MHz, 50 W Avg., 48 V Airfast® RF Power GaN Transistor
  • A2I25D012N: 2100-2900 MHz, 2.2 W Avg., 28 V Airfast® RF LDMOS Wideband Integrated Amplifiers
  • A2I25D025N: 100-3600 MHz, 3.2 W Avg., 28 V Airfast® RF LDMOS Wideband Integrated Amplifiers
  • A2I25H060N: 2300-2690 MHz, 10.5 W Avg., 28 V Airfast® Wideband Integrated RF LDMOS Amplifier
  • A2T23H160-24S: 2300-2400 MHz, 28 W AVG., 28 V Airfast® RF Power LDMOS Transistor
  • A2T23H300-24S: 2300-2400 MHz, 66 W Avg., 28 V Airfast® RF Power LDMOS Transistor
  • A2T26H160-24S: 2496-2690 MHz, 28 W Avg., 28 V Airfast® RF Power LDMOS Transistor
  • A2T26H165-24S: 2496-2690 MHz, 32 W Avg., 28 V Airfast® RF Power LDMOS Transistor
  • A2T26H300-24S: 2496-2690 MHz, 60 W Avg., 28 V Airfast® RF Power LDMOS Transistor
  • A3T26H200W24S: 2496-2690 MHz, 37 W Avg., 28 V Airfast® RF Power LDMOS Transistor
  • AFT23H160-25S: 2300-2400 MHz, 32 W AVG., 28 V Airfast® RF Power LDMOS Transistor
  • AFT23H200-4S2L: 2300-2400 MHz, 45 W Avg., 28 V Airfast® RF Power LDMOS Transistor
  • AFT23H201-24S: 2300-2400 MHz, 45 W Avg., 28 V Airfast® RF Power LDMOS Transistor
  • AFT23S160W02S: 2300-2400 MHz, 45 W Avg., 28 V Airfast® RF Power LDMOS Transistors
  • AFT23S170-13S: 2300-2400 MHz 45 W Avg., 28 V Airfast® RF Power LDMOS Transistor
  • AFT26H160-4S4: 2496-2690 MHz, 32 W Avg., 28 V Airfast® RF Power LDMOS Transistor
  • AFT26H200W03S: 2496-2690 MHz, 45 W Avg., 28 V Airfast® RF Power LDMOS Transistor
  • AFT26H250-24S: 2496-2690 MHz, 50 W Avg., 28 V Airfast® RF Power LDMOS Transistor
  • AFT26H250W03S: 2496-2690 MHz, 50 W Avg., 28 V Airfast® RF Power LDMOS Transistor
  • AFT26HW050S: 2496-2690 MHz, 9 W Avg., 28 V Airfast® RF Power LDMOS Transistors
  • AFT26P100-4WS: 2496-2690 MHz, 22 W Avg., 28 V Airfast® RF Power LDMOS Transistors
  • MD7IC2755N: 2500-2700 MHz, 10 W Avg., 28 V WiMAX RF LDMOS Wideband Integrated Amplifiers
  • MRF6P27160HR6: 2600-2700 MHz, 35 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFET
  • MRF6S27015N: 2300-2700 MHz, 3 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs
  • MRF6S27085H: 2600-2700 MHz, 20 W Avg., 28 V Single N-CDMA Lateral N-Channel RF Power MOSFETs
  • MRF7S27130H: 2500-2700 MHz, 23 W Avg., 28 V WiMAX Lateral N-Channel RF Power MOSFETs
  • MRF8P23080H: 2300-2400 MHz, 16 W Avg., 28 V W-CDMA, LTE RF Power LDMOS Transistors
  • MRF8P23160WH: 2300-2400 MHz, 30 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs
  • MRF8P26080H: 2500-2700 MHz, 14 W Avg., 28 V W-CDMA, LTE RF Power LDMOS Transistors
  • MW7IC2725N: 2500-2700 MHz, 4 W Avg., 28 V WiMAX RF LDMOS Wideband Integrated Amplifiers
3400 - 3800 MHz
  • A2G35S160-01S: 3400-3600 MHz, 32 W Avg., 48 V Airfast® RF Power GaN Transistor
  • A2G35S200-01S: 3400-3600 MHz, 40 W Avg., 48 V Airfast® RF Power GaN Transistor
  • A2I35H060N: 3400-3800 MHz, 10 W Avg., 28 V Airfast® Wideband Integrated RF LDMOS Amplifiers
  • AFT27S006N: 100-3600 MHz, 28.8 dBm Avg., 28 V Airfast® RF Power LDMOS Transistor
  • AFT27S010N: 100-3600 MHz, 1.26 W Avg., 28 V Airfast® RF Power LDMOS Transistor
  • MW7IC3825N: 3400-3600 MHz, 5 W Avg., 28 V WiMAX RF LDMOS Wideband Integrated Power Amplifiers
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