A2I20D020N: 1400-2200 MHz, 2.5 W Avg., 28 V Wideband Integrated RF LDMOS Amplifier

TO-270WB-17 and TO-270WBG-17 Package Image
特性
  • Extremely Wide RF Bandwidth
  • RF Decoupled Drain Pins Reduce Overall Board Space
  • On-Chip Matching (50 Ohm Input, DC Blocked)
  • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
  • RoHS Compliant
Data Sheets (1)
Name/DescriptionModified Date
A2I20D020N 1400-2200 MHz, 2.5 W Avg, 28 V Data Sheet (REV 0) PDF (453.4 kB) A2I20D020N16 May 2016
Application Notes (4)
Name/DescriptionModified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN195529 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN190713 May 2009
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 (REV 1) PDF (111.6 kB) AN198712 May 2004
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 (REV 0) PDF (112.8 kB) AN197709 Oct 2003
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Selector Guides (1)
Name/DescriptionModified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG4626 May 2016
Package Information (2)
Name/DescriptionModified Date
98ASA00583D, TO-WB, 17.53x9.02x2.59, Pitch 9.02, 18 Pins (REV B) PDF (86.9 kB) 98ASA00583D22 Jan 2016
98ASA00729D, TO-WB, 17.53x9.02x2.59, Pitch 1.02, 18 Pins (REV B) PDF (88.0 kB) 98ASA00729D18 Jan 2016
Ordering Information
ProductStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
A2I20D020GNR1Active140022002842162.5 @ AVGW-CDMA31 @ 180019.72.9I/OABLDMOS
A2I20D020NR1Active140022002842162.5 @ AVGW-CDMA31 @ 180019.72.9I/OABLDMOS
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupMSLPPT (°C)
TO-270 WBG-1798ASA00729DMPQ - 500 REELPOQ - 500 BOXActiveA2I20D020GNR1A2I20D020GNR1.pdf3260
TO-270 WB-1798ASA00583DMPQ - 500 REELPOQ - 500 BOXActiveA2I20D020NR1A2I20D020NR1.pdf3260
A2I20D020N 1400-2200 MHz, 2.5 W Avg, 28 V Data Sheet A2I20D020N
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 MMRF2010N
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 MMRF2010N
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
98ASA00729D, TO-WB, 17.53x9.02x2.59, Pitch 1.02, 18 Pins A2I35H060N
A2I20D020GNR1.pdf A2I20D020N
98ASA00583D, TO-WB, 17.53x9.02x2.59, Pitch 9.02, 18 Pins A2I35H060N
A2I20D020NR1.pdf A2I20D020N