MRF8P9210N: 920-960 MHz, 63 W Avg., 28 V Single W-CDMA RF Power LDMOS Transistor
OM-780-4 Package Image
特性
- Production Tested in a Symmetrical Doherty Configuration
- 100% PAR Tested for Guaranteed Output Power Capability
- Characterized with Large-Signal Load-Pull Parameters and Common Source S-Parameters
- Internally Matched for Ease of Use
- Integrated ESD Protection
- Greater Negative Gate-Source Voltage Range for Improved Class C Operation
- Designed for Digital Predistortion Error Correction Systems
- 225°C Capable Plastic Package
- RoHS Compliant
- In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13-inch Reel.
Data Sheets (1)
| Name/Description | Modified Date |
|---|---|
| MRF8P9210NR3 920-960 MHz, 63 W Avg., 28 V Single W-CDMA RF Power LDMOS Transistor (REV 0) PDF (705.1 kB) MRF8P9210N | 14 Dec 2011 |
Application Notes (3)
| Name/Description | Modified Date |
|---|---|
| AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 | 29 Apr 2014 |
| AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN1907 | 13 May 2009 |
| Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (413.2 kB) AN3789 | 12 Mar 2009 |
Engineering Bulletins (1)
| Name/Description | Modified Date |
|---|---|
| Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 | 19 Jan 2004 |
Selector Guides (1)
| Name/Description | Modified Date |
|---|---|
| RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 | 26 May 2016 |
Package Information (1)
| Name/Description | Modified Date |
|---|---|
| 98ASA10833D, OMNI, 20.57x9.78x3.81, Pitch 8.89, 5 Pins (REV B) PDF (69.8 kB) 98ASA10833D | 22 Mar 2016 |
Printed Circuit Boards
- MRF8P9210N CAD DXF File (REV 0) ZIP MRF8P9210N_DXF_PCB 12/15/2011
Ordering Information
| Product | Status | Status | Frequency Min (Min) (MHz) | Frequency Max (Max) (MHz) | Supply Voltage (Typ) (V) | P1dB (Typ) (dBm) | P1dB (Typ) (W) | Output Power (Typ) (W) @ Intermodulation Level at Test Signal | Test Signal | Power Gain (Typ) (dB) @ f (MHz) | Efficiency (Typ) (%) | Thermal Resistance (Spec)(°C/W) | Matching | Class | Die Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MRF8P9210NR3 | Active | 920 | 960 | 28 | 52.9 | 193 | 63 @ AVG | W-CDMA | 16.7 @ 960 | 47.4 | 0.53 | I/O | AB, C | LDMOS |
Package Information
| Package Description | Outline Version | Packing | Product Status | Part Number | Chemical Content | RoHS / Pb FreeChina RoHS Lookup | MSL | PPT (°C) |
|---|---|---|---|---|---|---|---|---|
| OM780-4 straight Cu | 98ASA10833D | MPQ - 250 REELPOQ - 250 REEL | Active | MRF8P9210NR3 | MRF8P9210NR3.pdf |   | 3 | 260 |
- AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
- AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n
- Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages mrf1570n
- Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
- RF Products Selector Guide MMT20303H
- MRF8P9210N CAD DXF File MRF8P9210N
- 98ASA10833D, OMNI, 20.57x9.78x3.81, Pitch 8.89, 5 Pins MMRF1020-04N
- MRF8P9210NR3.pdf MRF8P9210N
