MRFE6S8046N: 864-894 MHz, 35.5 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs
TO-270 WB-4, TO-270 WB-4 Gull Package Image
特性
- Typical GSM Performance: VDD = 28 Volts, IDQ = 300 mA, Pout = 35.5 Watts CW Frequency Gps(dB) ηD(%) 864 MHz19.958.7 880 MHz2058.5 894 MHz19.857.7
- Capable of Handling 5:1 VSWR, @ 32 Vdc, 880 MHz, 70 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness
- Typical Pout @ 1 dB Compression Point ≃ 47 Watts CW
- Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 285 mA, Pout = 17.8 Watts Avg. Frequency Gps(dB) ηD(%) Spectral Regrowth@ 400 kHz(dBc) Spectral Regrowth@ 600 kHz(dBc) EVM(% rms) 864 MHz19.843.861.270.92.1 880 MHz19.943.663.472.52 894 MHz19.843.163.7732
- Class F Output Matched for Higher Impedances and Greater Efficiency
- Designed for High Efficiency. Typical Drain Efficiency @ P1dB ≃ 66%
- Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters
- Internally Matched for Ease of Use
- Integrated ESD Protection
- Greater Negative Gate-Source Voltage Range for Improved Class C Operation
- 225°C Capable Plastic Package
- RoHS Compliant
- In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Data Sheets (1)
| Name/Description | Modified Date |
|---|---|
| MRFE6S8046NR1, MRFE6S8046GNR1 864-894 MHz, 35.5 W CW, 28 V GSM, GSM EDGE Lateral N-Channel RF Power MOSFETs (REV 0) PDF (450.5 kB) MRFE6S8046N | 06 May 2009 |
Application Notes (3)
| Name/Description | Modified Date |
|---|---|
| AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 | 29 Apr 2014 |
| AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN1907 | 13 May 2009 |
| Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (413.2 kB) AN3789 | 12 Mar 2009 |
Engineering Bulletins (1)
| Name/Description | Modified Date |
|---|---|
| Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 | 19 Jan 2004 |
Selector Guides (1)
| Name/Description | Modified Date |
|---|---|
| RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 | 26 May 2016 |
Package Information (2)
| Name/Description | Modified Date |
|---|---|
| 98ASA10578D, TO, 17.0x9.0x2.59, Pitch 0.21, 4 Pins (REV E) PDF (75.2 kB) 98ASA10578D | 17 Mar 2016 |
| 98ASA10577D, TO, 17.53x9.02x2.59, Pitch 5.38, 5 Pins (REV F) PDF (75.9 kB) 98ASA10577D | 18 Jan 2016 |
Ordering Information
| Product | Status | Status | Frequency Min (Min) (MHz) | Frequency Max (Max) (MHz) | Supply Voltage (Typ) (V) | P1dB (Typ) (dBm) | P1dB (Typ) (W) | Output Power (Typ) (W) @ Intermodulation Level at Test Signal | Test Signal | Power Gain (Typ) (dB) @ f (MHz) | Efficiency (Typ) (%) | Thermal Resistance (Spec)(°C/W) | Matching | Class | Die Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MRFE6S8046NR1 | No Longer Manufactured | 864 | 894 | 28 | 46.7 | 47 | 35.5 @ CW | 1-Tone | 19.8 @ 894 | 57.7 | 1.7 | I/O | AB | LDMOS | |
| MRFE6S8046GNR1 | No Longer Manufactured | 864 | 894 | 28 | 46.7 | 47 | 35.5 @ CW | 1-Tone | 19.8 @ 894 | 57.7 | 1.7 | I/O | AB | LDMOS |
Package Information
| Package Description | Outline Version | Packing | Product Status | Part Number | Chemical Content | RoHS / Pb FreeChina RoHS Lookup | MSL | PPT (°C) |
|---|---|---|---|---|---|---|---|---|
| TO-270 WB-4 | 98ASA10577D | MPQ - 500 REELPOQ - 500 BOX | No Longer Manufactured | MRFE6S8046NR1 | MRFE6S8046NR1.pdf |  | 3 | 260 |
| TO-270 WB-4 GULL | 98ASA10578D | No Longer Manufactured | MRFE6S8046GNR1 | MRFE6S8046GNR1.pdf | | 3 | 260 |
