MW6S010N: 450-1500 MHz, 10 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs
TO-270-2, TO-270G-2 Gull Package Image
特性
- Typical Two-Tone Performance @ 960 MHz, VDD = 28 Volts, IDQ = 125 mA, Pout = 10 Watts PEP Power Gain: 18 dB Drain Efficiency: 32% IMD: –37 dBc
- Capable of Handling 10:1 VSWR, @ 28 Vdc, 960 MHz, 10 Watts CW Output Power
- Characterized with Series Equivalent Large–Signal Impedance Parameters
- On-Chip RF Feedback for Broadband Stability
- Qualified Up to a Maximum of 32 VDD Operation
- Integrated ESD Protection
- 225°C Capable Plastic Package
- RoHS Compliant.
- In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
Data Sheets (1)
| Name/Description | Modified Date |
|---|---|
| MW6S010NR1, MW6S010GNR1 450-1500 MHz, 10 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs (REV 5) PDF (742.7 kB) MW6S010N | 19 Jun 2009 |
Application Notes (3)
| Name/Description | Modified Date |
|---|---|
| AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 | 29 Apr 2014 |
| AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN1907 | 13 May 2009 |
| Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (413.2 kB) AN3789 | 12 Mar 2009 |
Engineering Bulletins (1)
| Name/Description | Modified Date |
|---|---|
| Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 | 19 Jan 2004 |
Selector Guides (1)
| Name/Description | Modified Date |
|---|---|
| RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 | 26 May 2016 |
Package Information (2)
| Name/Description | Modified Date |
|---|---|
| 98ASA99301D, TO, 9.65x6.1x2.11, Pitch 4.98, 3 Pins (REV D) PDF (86.0 kB) 98ASA99301D | 30 Mar 2016 |
| 98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins (REV R) PDF (80.5 kB) 98ASH98117A | 26 Feb 2016 |
Ordering Information
| Product | Status | Status | Frequency Min (Min) (MHz) | Frequency Max (Max) (MHz) | Supply Voltage (Typ) (V) | P1dB (Typ) (dBm) | P1dB (Typ) (W) | Output Power (Typ) (W) @ Intermodulation Level at Test Signal | Test Signal | Power Gain (Typ) (dB) @ f (MHz) | Efficiency (Typ) (%) | Thermal Resistance (Spec)(°C/W) | Matching | Class | Die Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MW6S010NR1 | Active | 450 | 1500 | 28 | 40 | 10 | 10 @ PEP | 2-Tone | 18 @ 960 | 32 | 2.85 | Unmatched | AB | LDMOS | |
| MW6S010GNR1 | Active | 450 | 1500 | 28 | 40 | 10 | 10 @ PEP | 2-Tone | 18 @ 960 | 32 | 2.85 | Unmatched | AB | LDMOS |
Package Information
| Package Description | Outline Version | Packing | Product Status | Part Number | Chemical Content | RoHS / Pb FreeChina RoHS Lookup | MSL | PPT (°C) |
|---|---|---|---|---|---|---|---|---|
| TO-270-2 GULL | 98ASA99301D | MPQ - 500 REELPOQ - 500 REEL | Active | MW6S010GNR1 | MW6S010GNR1.pdf |  | 3 | 260 |
| TO-270-2 | 98ASH98117A | MPQ - 500 REELPOQ - 500 REEL | Active | MW6S010NR1 | MW6S010NR1.pdf | | 3 | 260 |
- AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
- AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n
- Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages mrf1570n
- Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
- RF Products Selector Guide MMT20303H
- 98ASA99301D, TO, 9.65x6.1x2.11, Pitch 4.98, 3 Pins aft09ms031n
- MW6S010GNR1.pdf MW6S010N
- 98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins aft09ms031n
- MW6S010NR1.pdf MW6S010N
