MRF7S18170H: 1805-1880 MHz, 50 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

NI-880, NI-880S Package Image
特性
  • Typical Single–Carrier W–CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 50 Watts Avg., Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain: 17.5 dB Drain Efficiency: 31% Device Output Signal PAR:  6.2 dB @ 0.01% Probability on CCDF ACPR @ 5 MHz Offset: –37 dBc in 3.84 MHz Channel Bandwidth
  • Capable of Handling 5:1 VSWR, @ 32 Vdc, 1840 MHz, 170 Watts CW Peak Tuned Output Power
  • Pout @ 1 dB Compression Point ≥ 170 Watts CW
  • 100% PAR Tested for Guaranteed Output Power Capability
  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Designed for Digital Predistortion Error Correction Systems
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel
Data Sheets (1)
Name/DescriptionModified Date
MRF7S18170HR3, MRF7S18170HSR3 1805-1880 MHz, 50 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs (REV 2) PDF (956.8 kB) MRF7S18170H31 Mar 2011
Application Notes (1)
Name/DescriptionModified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN195529 Apr 2014
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Selector Guides (1)
Name/DescriptionModified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG4626 May 2016
Package Information (2)
Name/DescriptionModified Date
98ARB18660C, NI-C, 0.9x0.54x0.2, Pitch 1.4, 2 Pins (REV F) PDF (41.4 kB) 98ARB18660C01 Mar 2016
98ARB18493C, NI-C, 1.34x0.54x0.2, Pitch 1.44, 3 Pins (REV G) PDF (47.3 kB) 98ARB18493C04 Feb 2016
Ordering Information
ProductStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
MRF7S18170HSR5No Longer Manufactured180518802852.317050 @ AVGW-CDMA17.5 @ 1880310.3I/OABLDMOS
MRF7S18170HR3No Longer Manufactured180518802852.317050 @ AVGW-CDMA17.5 @ 1880310.3I/OABLDMOS
MRF7S18170HSR3No Longer Manufactured180518802852.317050 @ AVGW-CDMA17.5 @ 1880310.3I/OABLDMOS
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupPPT (°C)
NI-88098ARB18493CNo Longer ManufacturedMRF7S18170HR3MRF7S18170HR3.pdf260
NI-880S98ARB18660CNo Longer ManufacturedMRF7S18170HSR3MRF7S18170HSR3.pdf260
No Longer ManufacturedMRF7S18170HSR5MRF7S18170HSR5.pdf