MD7P19130H: 1930-1990 MHz, 40 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs
NI-780-4, NI-780S-4 Package Image
特性
- Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1250 mA, Pout = 40 Watts Avg., f = 1987.5 MHz, IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain: 20 dB Drain Efficiency: 30% Device Output Signal PAR: 6 dB @ 0.01% Probability on CCDF ACPR @ 5 MHz Offset: –36 dBc in 3.84 MHz Channel Bandwidth
- Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 130 Watts CW Output Power
- Pout @ 1 dB Compression Point ≃ 130 Watts CW
- 100% PAR Tested for Guaranteed Output Power Capability
- Characterized with Series Equivalent Large-Signal Impedance Parameters
- Internally Matched for Ease of Use
- Integrated ESD Protection
- Greater Negative Gate-Source Voltage Range for Improved Class C Operation
- RoHS Compliant
- In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel
Data Sheets (1)
| Name/Description | Modified Date |
|---|---|
| MD7P19130HR3, MD7P19130HSR3 1930-1990 MHz, 40 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs (REV 2) PDF (769.1 kB) MD7P19130H | 11 Aug 2010 |
Application Notes (1)
| Name/Description | Modified Date |
|---|---|
| AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 | 29 Apr 2014 |
Engineering Bulletins (1)
| Name/Description | Modified Date |
|---|---|
| Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 | 19 Jan 2004 |
Selector Guides (1)
| Name/Description | Modified Date |
|---|---|
| RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 | 26 May 2016 |
Package Information (2)
| Name/Description | Modified Date |
|---|---|
| 98ASA10718D, NI-C, 19.81x9.34x3.75, Pitch 4.44, 5 Pins (REV C) PDF (42.9 kB) 98ASA10718D | 15 Aug 2016 |
| 98ASA10793D (REV A) PDF (47.9 kB) 98ASA10793D | 21 Mar 2016 |
Ordering Information
| Product | Status | Frequency Min (Min) (MHz) | Frequency Max (Max) (MHz) | Supply Voltage (Typ) (V) | P1dB (Typ) (dBm) | P1dB (Typ) (W) | Output Power (Typ) (W) @ Intermodulation Level at Test Signal | Test Signal | Power Gain (Typ) (dB) @ f (MHz) | Efficiency (Typ) (%) | Thermal Resistance (Spec)(°C/W) | Matching | Class | Die Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MD7P19130HR3 | No Longer Manufactured | 1930 | 1990 | 28 | 51.1 | 130 | 40 @ AVG | W-CDMA | 20 @ 1987.5 | 30 | 0.36 | I/O | AB | LDMOS |
| MD7P19130HSR3 | No Longer Manufactured | 1930 | 1990 | 28 | 51.1 | 130 | 40 @ AVG | W-CDMA | 20 @ 1987.5 | 30 | 0.36 | I/O | AB | LDMOS |
Package Information
| Package Description | Outline Version | Packing | Product Status | Part Number | Chemical Content | RoHS / Pb FreeChina RoHS Lookup | PPT (°C) |
|---|---|---|---|---|---|---|---|
| NI 780H-4 | 98ASA10793D | No Longer Manufactured | MD7P19130HR3 | MD7P19130HR3.pdf |   | 260 | |
| NI-780HS-4 | 98ASA10718D | No Longer Manufactured | MD7P19130HSR3 | MD7P19130HSR3.pdf | | 260 |
