MRFE6S9125N: 865-960 MHz, 27 W Avg., 28 V, N-CDMA, GSM EDGE RF Power LDMOS Transistors

Typical Single-Carrier N-CDMA Performance @ 800 MHz, VDD = 28 Volts, IDQ = 950 mA, Pout = 27 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain: 20.2 dB Drain Efficiency: 31% ACPR @ 750 kHz Offset: –45.7 dBc in 30 kHz Bandwidth
Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive, Designed for Enhanced Ruggedness.
Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 700mA, Pout = 60 Watts Avg., Full Frequency Band (865-960 MHz or 920-960 MHz) Power Gain: 20 dB Drain Efficiency: 40% Spectral Regrowth @ 400 kHz Offset = –63 dBc Spectral Regrowth @ 600 kHz Offset = –78 dBc EVM: 1.8% rms
Typical GSM Performance: VDD = 28 Volts, IDQ = 700mA, Pout = 125 Watts, Full Frequency Band (920-960 MHz) Power Gain: 19 dB Drain Efficiency: 62%
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

Name/Description	Modified Date
MRFE6S9125NR1, MRFE6S9125NBR1 880 MHz, 27 W Avg., 28 V Single N-CDMA, GSM EDGE Lateral N-Channel RF Power MOSFETs (REV 0) PDF (608.3 kB) MRFE6S9125N	19 Oct 2007

Name/Description	Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955	29 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN1907	13 May 2009
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (413.2 kB) AN3789	12 Mar 2009
Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (8.2 MB) AN3263	07 Jun 2006

Name/Description	Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212	19 Jan 2004

Name/Description	Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46	26 May 2016

Name/Description	Modified Date
98ASA10575D, TO, 23.0x8.0x2.59, Pitch 12.0, 4 Pins (REV F) PDF (73.4 kB) 98ASA10575D	17 Mar 2016
98ASA10577D, TO, 17.53x9.02x2.59, Pitch 5.38, 5 Pins (REV F) PDF (75.9 kB) 98ASA10577D	18 Jan 2016

Product	Status	Status	Frequency Min (Min) (MHz)	Frequency Max (Max) (MHz)	Supply Voltage (Typ) (V)	P1dB (Typ) (dBm)	P1dB (Typ) (W)	Output Power (Typ) (W) @ Intermodulation Level at Test Signal	Test Signal	Power Gain (Typ) (dB) @ f (MHz)	Efficiency (Typ) (%)	Thermal Resistance (Spec)(°C/W)	Matching	Class	Die Technology
MRFE6S9125NR1	Active		865	960	28	51	125	27 @ AVG	N-CDMA	20.2 @ 880	31	0.45	Input	AB	LDMOS
MRFE6S9125NBR1	Active		865	960	28	51	125	27 @ AVG	N-CDMA	20.2 @ 880	31	0.45	Input	AB	LDMOS

Package Description	Outline Version	Packing	Product Status	Part Number	Chemical Content	RoHS / Pb FreeChina RoHS Lookup	MSL	PPT (°C)
TO-272 WB-4	98ASA10575D	MPQ - 500 REELPOQ - 500 BOX	Active	MRFE6S9125NBR1	MRFE6S9125NBR1.pdf		3	260
TO-270 WB-4	98ASA10577D	MPQ - 500 REELPOQ - 500 BOX	Active	MRFE6S9125NR1	MRFE6S9125NR1.pdf		3	260