MW7IC18100N: 1990 MHz, 100 W, 28 V GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifiers

Typical GSM Performance: VDD = 28 Volts, IDQ1 = 180 mA, IDQ2 = 1000 mA, Pout = 100 Watts CW, 1805–1880 MHz or 1930–1990 MHz Power Gain: 30 dB Power Added Efficiency: 48%
Typical GSM EDGE Performance: VDD = 28 Volts, IDQ1 = 215 mA, IDQ2 = 800 mA, Pout = 40 Watts Avg., 1805–1880 MHz or 1930–1990 MHz Power Gain = 31 dB Power Added Efficiency: 35% Spectral Regrowth @ 400 kHz Offset = –63 dBc Spectral Regrowth @ 600 kHz Offset = –80 dBc EVM = 1.5%
Capable of Handling 5:1 VSWR, @ 28 Vdc, 1990 MHz, 100 Watts CW Output Power
Stable into a 5:1 VSWR. All Spurs Below –60 dBc @ 1 mW to 120 W CW Pout.
Characterized with Series Equivalent Large–Signal Impedance Parameters and Common Source Scattering Parameters
On-Chip Matching (50 Ohm Input, DC Blocked)
Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
Integrated ESD Protection
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

Name/Description	Modified Date
MW7IC18100NR1, MW7IC18100GNR1, MW7IC18100NBR1 1990 MHz, 100 W, 28 V GSM/GSM EDGE RF LDMOS Wideband Integrated Power... (REV 3) PDF (1.1 MB) MW7IC18100N	24 Mar 2009

Name/Description	Modified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955	29 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN1907	13 May 2009
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (413.2 kB) AN3789	12 Mar 2009
Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (8.2 MB) AN3263	07 Jun 2006
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 (REV 1) PDF (111.6 kB) AN1987	12 May 2004
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 (REV 0) PDF (112.8 kB) AN1977	09 Oct 2003

Name/Description	Modified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212	19 Jan 2004

Name/Description	Modified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46	26 May 2016

Name/Description	Modified Date
98ASA10650D, TO, 17.65x9.25x2.59, Pitch 0.36, 14 Pins (REV B) PDF (72.7 kB) 98ASA10650D	18 Mar 2016
98ASA10649D, TO, 23.65x9.25x2.59, Pitch 9.02, 14 Pins (REV B) PDF (71.4 kB) 98ASA10649D	26 Feb 2016
98ASA10653D, TO, 17.6x9.3x2.59, Pitch 1.02, 14 Pins (REV B) PDF (77.4 kB) 98ASA10653D	26 Feb 2016

Product	Status	Frequency Min (Min) (MHz)	Frequency Max (Max) (MHz)	Supply Voltage (Typ) (V)	P1dB (Typ) (dBm)	P1dB (Typ) (W)	Output Power (Typ) (W) @ Intermodulation Level at Test Signal	Test Signal	Power Gain (Typ) (dB) @ f (MHz)	Efficiency (Typ) (%)	Thermal Resistance (Spec)(°C/W)	Matching	Class	Die Technology
MW7IC18100NR1	No Longer Manufactured	1805	2050	28	50	100	100 @ CW	CW	30 @ 1990	48	0.51	I/O	AB	LDMOS
MW7IC18100NBR1	No Longer Manufactured	1805	2050	28	50	100	100 @ CW	CW	30 @ 1990	48	0.51	I/O	AB	LDMOS
MW7IC18100GNR1	No Longer Manufactured	1805	2050	28	50	100	100 @ CW	CW	30 @ 1990	48	0.51	I/O	AB	LDMOS

Package Description	Outline Version	Packing	Product Status	Part Number	Chemical Content	MSL	PPT (°C)
TO-270 WB-14 LEAD	98ASA10650D	MPQ - 500 REELPOQ - 500 BOX	No Longer Manufactured	MW7IC18100NR1	MW7IC18100NR1.pdf	3	260
TO-272 WB-14 LEAD	98ASA10649D	MPQ - 500 REELPOQ - 500 BOX	No Longer Manufactured	MW7IC18100NBR1	MW7IC18100NBR1.pdf	3	260
TO-270 WB-14 GULL	98ASA10653D		No Longer Manufactured	MW7IC18100GNR1	MW7IC18100GNR1.pdf	3	260