MWE6IC9100N: 865-960 MHz, 100 W, 26 V GSM/GSM EDGE RF LDMOS Wideband Integrated Amplifiers
The MWE6IC9100NR1 and MWE6IC9100NBR1 wideband integrated circuits are designed with on-chip matching that make them usable from 865 to 960 MHz. These multi-stage structures are rated for 26 to 32 Volt operation and cover all typical cellular base station modulation formats.
TO-272 WB-14, TO-270 WB-14 Package Image
特性
- Typical GSM Performance: VDD = 26 Volts, IDQ1 = 120 mA, IDQ2 = 950 mA, Pout = 100 Watts CW, f = 960 MHz
Power Gain: 33.5 dB
Power Added Efficiency: 54%
- Typical GSM EDGE Performance: VDD = 28 Volts, IDQ1 = 230 mA,
IDQ2 = 870 mA, Pout = 50 Watts Avg., Full Frequency Band (869–960 MHz)
Power Gain: 35.5 dB
Power Added Efficiency: 39%
Spectral Regrowth @ 400 kHz Offset = –63 dBc
Spectral Regrowth @ 600 kHz Offset = –81 dBc
EVM: 2% rms
- Capable of Handling 10:1 VSWR, @ 32 Vdc, 960 MHz, 3 dB Overdrive, Designed for Enhanced Ruggedness
- Stable into a 5:1 VSWR. All Spurs Below –60 dBc @ 1 mW to 120 W CW Pout.
- Characterized with Series Equivalent Large–Signal Impedance Parameters
and Common Source Scattering Parameters
- On-Chip Matching (50 Ohm Input, DC Blocked)
- Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
- Integrated ESD Protection
- 225°C Capable Plastic Package
- RoHS Compliant
- In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Data Sheets (2)
Application Notes (6)
Engineering Bulletins (1)
Selector Guides (1)
White Papers (1)
Package Information (2)
Ordering Information
Product | Status | Status | Frequency Min (Min) (MHz) | Frequency Max (Max) (MHz) | Supply Voltage (Typ) (V) | P1dB (Typ) (dBm) | P1dB (Typ) (W) | Output Power (Typ) (W) @ Intermodulation Level at Test Signal | Test Signal | Power Gain (Typ) (dB) @ f (MHz) | Efficiency (Typ) (%) | Thermal Resistance (Spec)(°C/W) | Matching | Class | Die Technology |
---|
MWE6IC9100NBR1 | Not Recommended for New Design | | 865 | 960 | 26 | 50.5 | 112 | 100 @ CW | CW | 33.5 @ 960 | 54 | 0.38 | Input | AB | LDMOS |
MWE6IC9100NR1 | No Longer Manufactured | | 865 | 960 | 26 | 50.5 | 112 | 100 @ CW | CW | 33.5 @ 960 | 54 | 0.38 | Input | AB | LDMOS |
Package Information
Package Description | Outline Version | Packing | Product Status | Part Number | Chemical Content | RoHS / Pb FreeChina RoHS Lookup | MSL | PPT (°C) |
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TO-272 WB-14 LEAD | 98ASA10649D | MPQ - 500 REELPOQ - 500 BOX | Not Recommended for New Design | MWE6IC9100NBR1 | MWE6IC9100NBR1.pdf | | 3 | 260 |
TO-270 WB-14 LEAD | 98ASA10650D | MPQ - 500 REELPOQ - 500 BOX | No Longer Manufactured | MWE6IC9100NR1 | MWE6IC9100NR1.pdf | | 3 | 260 |