MW4IC2020N: 1805-1990 MHz, 20 W, 26 V, GSM/GSM EDGE, CDMA RF LDMOS Wideband Integrated Power Amplifiers

TO-272 WB-16, TO-272 WB-16 Gull Package Image
特性
  • Typical Two–Tone Performance: VDD = 26 Volts, IDQ1 = 80 mA, IDQ2 = 200 mA, IDQ3 = 300 mA, Pout = 20 Watts PEP, Full Frequency Band Power Gain: 29 dB IMD: –32 dBc Drain Efficiency: 26% (at 1805 MHz) and 20% (at 1990 MHz)
  • Typical GSM EDGE Performance: VDD = 26 Volts, IDQ1 = 80 mA, IDQ2 = 230 mA, IDQ3 = 230 mA, Pout = 5 Watts Avg., Full Frequency Band Power Gain: 29 dB Spectral Regrowth @ 400 kHz Offset = –66 dBc Spectral Regrowth @ 600 kHz Offset = –77 dBc EVM: 1% rms
  • Typical CDMA Performance: VDD = 26 Volts, IDQ1 = 80 mA, IDQ2 = 240 mA, IDQ3 = 250 mA, Pout = 1 Watt Avg., Full Frequency Band, IS–95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13), Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain: 30 dB ACPR @ 885 kHz Offset = –61 dBc in 30 kHz Bandwidth ALT1 @ 1.25 MHz Offset = –69 dBc in 12.5 kHz Bandwidth ALT2 @ 2.25 MHz Offset = –59 dBc in 1 MHz Bandwidth
  • Capable of Handling 3:1 VSWR, @ 26 Vdc, 1990 MHz, 8 Watts CW Output Power
  • Stable into a 3:1 VSWR. All Spurs Below –60 dBc @ 100 mW to 8 W CW Pout.
  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • On-Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)
  • Integrated Temperature Compensation with Enable/Disable Function
  • On-Chip Current Mirror gm Reference FET for Self Biasing Application
  • Integrated ESD Protection
  • 200°C Capable Plastic Package
  • N Suffix Indicates Lead-Free Terminations. RoHS Compliant.
  • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Data Sheets (1)
Name/DescriptionModified Date
MW4IC2020NBR1, MW4IC2020GNBR1 1805-1990 MHz, 20 W, 26 V, GSM/GSM EDGE, CDMA, RF LDMOS Wideband Integrated Power... (REV 9) PDF (647.7 kB) MW4IC2020N25 May 2006
Application Notes (6)
Name/DescriptionModified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN195529 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN190713 May 2009
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (413.2 kB) AN378912 Mar 2009
Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (8.2 MB) AN326307 Jun 2006
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 (REV 1) PDF (111.6 kB) AN198712 May 2004
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 (REV 0) PDF (112.8 kB) AN197709 Oct 2003
Selector Guides (1)
Name/DescriptionModified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG4626 May 2016
Package Information (2)
Name/DescriptionModified Date
98ARH99164A, TO-WB, 9.02x23.62x2.59, Pitch 0.04, 17 Pins (REV R) PDF (81.8 kB) 98ARH99164A29 Feb 2016
98ASA10532D, 1329A-04, TO-272WB 16 Lead Gull Wing Plastic (REV F) PDF (50.1 kB) 98ASA10532D30 Jun 2007
Ordering Information
ProductStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
MW4IC2020GNBR1No Longer Manufactured18051990262020 @ PEP2-Tone29 @ 1990202.3ABLDMOS
MW4IC2020NBR1No Longer Manufactured18051990262020 @ PEP2-Tone29 @ 1990202.3ABLDMOS
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupMSLPPT (°C)
TO-272 WB-16 GULL98ASA10532DMPQ - 500 REELPOQ - 500 REELNo Longer ManufacturedMW4IC2020GNBR1MW4IC2020GNBR1.pdf3260
TO-272 WB-1698ARH99164AMPQ - 500 REELPOQ - 500 BOXNo Longer ManufacturedMW4IC2020NBR1MW4IC2020NBR1.pdf3260