MW7IC2040N: Wideband Integrated Power Amplifiers

TO-272 WB-16, TO-270 WB-16, TO-270 WB-16 Gull Package Image
特性
  • Typical Single-Carrier W–CDMA Performance: VDD = 28 Volts, IDQ1 = 130 mA, IDQ2 = 330 mA, Pout = 4 Watts Avg., f = 1932.5, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
    • Power Gain: 32 dB
    • Power Added Efficiency: 17.5%
    • ACPR @ 5 MHz Offset: –50 dBc in 3.84 MHz Bandwidth
  • Power Gain: 32 dB
  • Power Added Efficiency: 17.5%
  • ACPR @ 5 MHz Offset: –50 dBc in 3.84 MHz Bandwidth
  • Capable of Handling 5:1 VSWR, @ 32 Vdc, 1960 MHz, 1960 MHz, 50 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)
  • Stable into a 3:1 VSWR. All Spurs Below –60 dBc @ 100 mW to 40 Watts CW Pout.
  • Typical Pout @ 1 dB Compression Point ≃ 30 Watts CW
特性
  • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ1 = 90 mA, IDQ2 = 430 mA, Pout = 16 Watts Avg., 1805–1880 MHz
    • Power Gain: 33 dB
    • Power Added Efficiency: 35%
    • Spectral Regrowth @ 400 kHz Offset = –62 dBc
    • Spectral Regrowth @ 600 kHz Offset = –77 dBc
    • EVM: 1.5% rms
  • Power Gain: 33 dB
  • Power Added Efficiency: 35%
  • Spectral Regrowth @ 400 kHz Offset = –62 dBc
  • Spectral Regrowth @ 600 kHz Offset = –77 dBc
  • EVM: 1.5% rms
特性
  • Typical GSM Performance: VDD = 28 Volts, IDQ1 = 90 mA, IDQ2 = 430 mA, Pout = 40 Watts CW, 1805–1880 MHz and 1930–1990 MHz
    • Power Gain: 31 dB
    • Power Added Efficiency: 50%
  • Power Gain: 31 dB
  • Power Added Efficiency: 50%
  • Characterized with Series Equivalent Large–Signal Impedance Parameters and Common Source S-Parameters
  • On-Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)
  • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
  • Integrated ESD Protection
  • 225°C Capable Plastic Package
  • RoHS Compliant
  • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Data Sheets (1)
Name/DescriptionModified Date
MW7IC2040NR1, MW7IC2040GNR1, MW7IC2040NBR1 1930-1990 MHz, 1805-1880 MHz, 4 W Avg., 28 V Single W-CDMA, GSM EDGE, GSM RF... (REV 1) PDF (943.8 kB) MW7IC2040N04 Nov 2009
Application Notes (6)
Name/DescriptionModified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN195529 Apr 2014
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN190713 May 2009
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (413.2 kB) AN378912 Mar 2009
Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (8.2 MB) AN326307 Jun 2006
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 (REV 1) PDF (111.6 kB) AN198712 May 2004
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 (REV 0) PDF (112.8 kB) AN197709 Oct 2003
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Selector Guides (1)
Name/DescriptionModified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG4626 May 2016
White Papers (1)
Name/DescriptionModified Date
Advances in Airfast® RFICs White Paper (REV 0) PDF (149.2 kB) AIRFASTWBFWP15 May 2015
Package Information (3)
Name/DescriptionModified Date
98ASA10754D, TO-WB, 17.6x9.15x2.59, Pitch 14.0, 16 Pins (REV D) PDF (79.3 kB) 98ASA10754D21 Mar 2016
98ARH99164A, TO-WB, 9.02x23.62x2.59, Pitch 0.04, 17 Pins (REV R) PDF (81.8 kB) 98ARH99164A29 Feb 2016
98ASA10755D, 1887-01, TO-270 Wide Body, 16 Lead Gull Wing (REV A) PDF (50.6 kB) 98ASA10755D31 Aug 2007
Ordering Information
ProductStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
MW7IC2040NBR1Active193019902844.8304 @ AVGW-CDMA32 @ 193017.51.5I/OABLDMOS
MW7IC2040NR1Active193019902844.8304 @ AVGW-CDMA32 @ 193017.51.5I/OABLDMOS
MW7IC2040GNR1Not Recommended for New Design193019902844.8304 @ AVGW-CDMA32 @ 193017.51.5I/OABLDMOS
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupMSLPPT (°C)
TO-272 WB-1698ARH99164AMPQ - 500 REELPOQ - 500 REELActiveMW7IC2040NBR1MW7IC2040NBR1.pdf3260
TO-270 WB-16 PLASTIC98ASA10754DMPQ - 500 REELPOQ - 500 REELActiveMW7IC2040NR1MW7IC2040NR1.pdf3260
TO-270 WB-16 GULL98ASA10755DMPQ - 500 REELPOQ - 500 BOXNot Recommended for New DesignMW7IC2040GNR1MW7IC2040GNR1.pdf3260
MW7IC2040NR1, MW7IC2040GNR1, MW7IC2040NBR1 1930-1990 MHz, 1805-1880 MHz, 4 W Avg., 28 V Single W-CDMA, GSM EDGE, GSM RF... MW7IC2040N
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages mrf1570n
Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages mrf1570n
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1987 MMRF2010N
Quiescent Current Control for the RF Integrated Circuit Device Family - AN1977 MMRF2010N
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
Advances in Airfast® RFICs White Paper MW7IC2725N
98ARH99164A, TO-WB, 9.02x23.62x2.59, Pitch 0.04, 17 Pins MMRF2004NB
MW7IC2040NBR1.pdf MW7IC2040N
98ASA10754D, TO-WB, 17.6x9.15x2.59, Pitch 14.0, 16 Pins MMRF2005N
MW7IC2040NR1.pdf MW7IC2040N
98ASA10755D, 1887-01, TO-270 Wide Body, 16 Lead Gull Wing MMRF2005N
MW7IC2040GNR1.pdf MW7IC2040N