MRF7S16150H: 1600-1660 MHz, 32 W Avg., 28 V WiMAX Lateral N-Channel RF Power MOSFETs

NI-780, NI-780S Package Image
特性
  • Typical WiMAX Performance: VDD = 28 Volts, IDQ = 1500 mA, Pout = 32 Watts Avg., f = 1600 and 1660 MHz, 802.16d, 64 QAM 3/4, 4 bursts, 7 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. Power Gain: 19.7 dB Drain Efficiency: 25.4% Device Output Signal PAR: 8.2 dB @ 0.01% Probability on CCDF ACPR @ 5.25 MHz Offset: –47.5 dBc in 0.5 MHz Channel Bandwidth
  • Capable of Handling 10:1 VSWR, @ 32 Vdc, 1630 MHz, 150 Watts CW Peak Tuned Output Power
  • Pout @ 1 dB Compression Point ≥ 150 Watts CW
  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel
Data Sheets (1)
Name/DescriptionModified Date
MRF7S16150HR3, MRF7S16150HSR3, 1600-1660 MHz, 32 W Avg., 28 V, WiMAX Lateral N-Channel RF Power MOSFETs (REV 1) PDF (463.5 kB) MRF7S16150HR331 Dec 2008
Application Notes (1)
Name/DescriptionModified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN195529 Apr 2014
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Selector Guides (1)
Name/DescriptionModified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG4626 May 2016
Package Information (2)
Name/DescriptionModified Date
98ASB15607C, NI-C, 1.34x0.39x3.76, Pitch 1.1, 3 Pins (REV H) PDF (44.1 kB) 98ASB15607C22 Mar 2016
98ASB16718C, NI-C, 0.81x0.39x3.76, Pitch 14.6, 3 Pins (REV J) PDF (43.5 kB) 98ASB16718C22 Mar 2016
Ordering Information
ProductStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
MRF7S16150HSR3No Longer Manufactured160016602851.815032 @ AVGWiMAX19.7 @ 166025.40.37I/OABLDMOS
MRF7S16150HR3No Longer Manufactured160016602851.815032 @ AVGWiMAX19.7 @ 166025.40.37I/OABLDMOS
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupPPT (°C)
NI-780S98ASB16718CMPQ - 250 REELPOQ - 250 BOXNo Longer ManufacturedMRF7S16150HSR3MRF7S16150HSR3.pdf260
NI-78098ASB15607CNo Longer ManufacturedMRF7S16150HR3MRF7S16150HR3.pdf260