MRF8P20160H: 1880-2025 MHz, 37 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs

NI-780-4, NI-780S-4 Package Image
特性
  • Production Tested in a Symmetrical Doherty Configuration
  • 100% PAR Tested for Guaranteed Output Power Capability
  • Characterized with Large-Signal Load-Pull Parameters and Common Source S-Parameters
  • Internally Matched for Ease of Use
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Designed for Digital Predistortion Error Correction Systems
  • RoHS Compliant
  • NI-780-4 in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13-inch Reel. NI-780S-4 in Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13-inch Reel.
Data Sheets (1)
Name/DescriptionModified Date
MRF8P20160HR3, MRF8P20160HSR3 1880-2025 MHz, 37 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs (REV 1) PDF (827.3 kB) MRF8P20160H23 Jul 2010
Application Notes (1)
Name/DescriptionModified Date
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN195529 Apr 2014
Engineering Bulletins (1)
Name/DescriptionModified Date
Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB21219 Jan 2004
Selector Guides (1)
Name/DescriptionModified Date
RF Products Selector Guide (REV 43) PDF (3.8 MB) SG4626 May 2016
Package Information (2)
Name/DescriptionModified Date
98ASA10718D, NI-C, 19.81x9.34x3.75, Pitch 4.44, 5 Pins (REV C) PDF (42.9 kB) 98ASA10718D15 Aug 2016
98ASA10793D (REV A) PDF (47.9 kB) 98ASA10793D21 Mar 2016
Ordering Information
ProductStatusFrequency Min (Min) (MHz)Frequency Max (Max) (MHz)Supply Voltage (Typ) (V)P1dB (Typ) (dBm)P1dB (Typ) (W)Output Power (Typ) (W) @ Intermodulation Level at Test SignalTest SignalPower Gain (Typ) (dB) @ f (MHz)Efficiency (Typ) (%)Thermal Resistance (Spec)(°C/W)MatchingClassDie Technology
MRF8P20160HR3Active188020252850.310737 @ AVGW-CDMA16.5 @ 192045.80.75I/OAB, CLDMOS
MRF8P20160HSR3Not Recommended for New Design188020252850.310737 @ AVGW-CDMA16.5 @ 192045.80.75I/OAB, CLDMOS
MRF8P20160HR5No Longer Manufactured188020252850.310737 @ AVGW-CDMA16.5 @ 192045.80.75I/OAB, CLDMOS
MRF8P20160HSR5No Longer Manufactured188020252850.310737 @ AVGW-CDMA16.5 @ 192045.80.75I/OAB, CLDMOS
Package Information
Package DescriptionOutline VersionPackingProduct StatusPart NumberChemical ContentRoHS / Pb FreeChina RoHS LookupPPT (°C)
NI 780H-498ASA10793DMPQ - 250 REELPOQ - 250 REELActiveMRF8P20160HR3MRF8P20160HR3.pdf260
No Longer ManufacturedMRF8P20160HR5MRF8P20160HR5.pdf260
NI-780HS-498ASA10718DMPQ - 250 REELPOQ - 250 BOXNot Recommended for New DesignMRF8P20160HSR3MRF8P20160HSR3.pdf260
No Longer ManufacturedMRF8P20160HSR5MRF8P20160HSR5.pdf260
MRF8P20160HR3, MRF8P20160HSR3 1880-2025 MHz, 37 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs MRF8P20160H
AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
RF Products Selector Guide MMT20303H
98ASA10793D MMRF1310H
MRF8P20160HR3.pdf MRF8P20160H
MRF8P20160HR5.pdf MRF8P20160H
98ASA10718D, NI-C, 19.81x9.34x3.75, Pitch 4.44, 5 Pins MMRF1310H
MRF8P20160HSR3.pdf MRF8P20160H
MRF8P20160HSR5.pdf MRF8P20160H