MRF7S19120NR1: 1930-1990 MHz, 36 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET
TO-270 WBL-4 Package Image
特性
- Typical Single–Carrier W–CDMA Performance: VDD = 28 Volts, IDQ = 1200 mA, Pout = 36 Watts Avg., Full Frequency Band, IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain: 18 dB Drain Efficiency: 32% Device Output Signal PAR: 6.1 dB @ 0.01% Probability on CCDF ACPR @ 5 MHz Offset: –38.5 dBc in 3.84 MHz Channel Bandwidth
- Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 120 Watts CW Output Power
- Pout @ 1 dB Compression Point ≥ 120 W CW
- 100% PAR Tested for Guaranteed Output Power Capability
- Characterized with Series Equivalent Large–Signal Impedance Parameters
- Internally Matched for Ease of Use
- Integrated ESD Protection
- Greater Negative Gate-Source Voltage Range for Improved Class C Operation
- Designed for Digital Predistortion Error Correction Systems
- 225°C Capable Plastic Package
- RoHS Compliant
- In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
Data Sheets (1)
| Name/Description | Modified Date |
|---|---|
| MRF7S19120NR1 1930-1990 MHz, 36 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFET (REV 3) PDF (779.0 kB) MRF7S19120N | 31 Mar 2011 |
Application Notes (3)
| Name/Description | Modified Date |
|---|---|
| AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes (REV 1) PDF (112.4 kB) AN1955 | 29 Apr 2014 |
| AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages (REV 3) PDF (910.7 kB) AN1907 | 13 May 2009 |
| Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages (REV 0) PDF (413.2 kB) AN3789 | 12 Mar 2009 |
Engineering Bulletins (1)
| Name/Description | Modified Date |
|---|---|
| Using Data Sheet Impedances for RF LDMOS Devices (REV 0) PDF (171.0 kB) EB212 | 19 Jan 2004 |
Selector Guides (1)
| Name/Description | Modified Date |
|---|---|
| RF Products Selector Guide (REV 43) PDF (3.8 MB) SG46 | 26 May 2016 |
Package Information (1)
| Name/Description | Modified Date |
|---|---|
| 98ASA10882D, TO-WBL, 23.75x9.25x3.17, Pitch 28.2, 4 Pins (REV E) PDF (78.2 kB) 98ASA10882D | 29 Mar 2016 |
Ordering Information
| Product | Status | Frequency Min (Min) (MHz) | Frequency Max (Max) (MHz) | Supply Voltage (Typ) (V) | P1dB (Typ) (dBm) | P1dB (Typ) (W) | Output Power (Typ) (W) @ Intermodulation Level at Test Signal | Test Signal | Power Gain (Typ) (dB) @ f (MHz) | Efficiency (Typ) (%) | Thermal Resistance (Spec)(°C/W) | Matching | Class | Die Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MRF7S19120NR1 | Not Recommended for New Design | 1930 | 1990 | 28 | 50.8 | 120 | 36 @ AVG | W-CDMA | 18 @ 1990 | 32 | 0.51 | I/O | AB | LDMOS |
Package Information
| Package Description | Outline Version | Packing | Product Status | Part Number | Chemical Content | RoHS / Pb FreeChina RoHS Lookup | MSL | PPT (°C) |
|---|---|---|---|---|---|---|---|---|
| TO-270 WB-4 LONG | 98ASA10882D | MPQ - 500 REELPOQ - 500 BOX | Not Recommended for New Design | MRF7S19120NR1 | MRF7S19120NR1.pdf |  | 3 | 260 |
- AN1955, Thermal Measurement Methodology of RF Power Amplifiers - Application Notes MMT20303H
- AN1907 Solder Reflow Attach Method for High Power RF Devices in Over-Molded Plastic Packages mrf1570n
- Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages mrf1570n
- Using Data Sheet Impedances for RF LDMOS Devices mrf1570n
- RF Products Selector Guide MMT20303H
- 98ASA10882D, TO-WBL, 23.75x9.25x3.17, Pitch 28.2, 4 Pins mrf7s19120nr1
- MRF7S19120NR1.pdf MRF7S19120NR1
