BLC8G27LS-60AV：Power LDMOS transistor _ BDTIC 中国领先电子元器件代理商

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BLC8G27LS-60AV：Power LDMOS transistor

60 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2490 MHz to 2690 MHz.

特性和优势

Excellent ruggedness
High efficiency
Low thermal resistance providing excellent thermal stability
Decoupling leads to enable improved video bandwidth
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

应用

RF power amplifier for LTE base stations and multi carrier applications in the 2490 MHz to 2690 MHz frequency range

产品图片

关键参数

Symbol	Parameter	Conditions	Min	Typ/Nom	Max	Unit
f_range	frequency range		2490		2690	MHz
P_L(1dB)	nominal output power at 1 dB gain compression			60		W
G_p	power gain	V_DS = 28 V; P_L(AV) = 10 W		15.5		dB
η_D	drain efficiency	V_DS = 28 V; P_L(AV) = 10 W		48		%
ACPR	adjacent channel power ratio	V_DS = 28 V; P_L(AV) = 10 W ^[0]		-30		dBc

封装与包装

型号	封装	Outline version	Reflow-/Wave soldering	包装	产品状态	标示	可订购的器件编号, (订购码 (12NC))
BLC8G27LS-60AV	DFM6 (SOT1275-1)	sot1275-1_po		Reel 13" Q1/T1 in Drypack	开发中	Standard Marking	BLC8G27LS-60AVY( 9340 692 59518 )
BLC8G27LS-60AV	DFM6 (SOT1275-1)	sot1275-1_po		Tray, NonBakeable, Multiple in Drypack	开发中	Standard Marking	BLC8G27LS-60AVZ( 9340 692 59517 )

引脚配置信息

Pin	Symbol	Description	外形简图	图形符号
1	D1	drain1 (main)
2	D2	drain2 (peak)
3	G1	gate1 (main)
4	G2	gate2 (peak)
5	VDM	video decoupling (main)
6	VDP	video decoupling (peak)
7	S	source

无铅环保信息

型号	可订购的器件编号	RoHS / RHF	无铅转换日期	潮湿敏感度等级	MSL LF
BLC8G27LS-60AV	BLC8G27LS-60AVY		Always Pb-free	3	3
BLC8G27LS-60AV	BLC8G27LS-60AVZ		Always Pb-free	3	3

文档资料

档案名称	标题	类型	格式	日期
BLC8G27LS-60AV (中文)	Power LDMOS transistor	Data sheet	pdf	2015-03-30
AN10896	Mounting and Soldering of RF transistors	Application note	pdf	2015-03-24
75017347	Enabling the Mobile Experience	Brochure	pdf	2013-02-05
75017604	Gen8: the latest LDMOS RF power portfolio for wireless infrastructures	Leaflet	pdf	2014-09-04
fatigue_in_aluminum_bond_wires	Fatigue in aluminum bond wires	Mounting and soldering	pdf	2009-10-08
Factsheet_Gen8_LDMOS_RF_pt_with_VBW	Factsheet Gen8 LDMOS RF power transistor with Video Bandwidth	Other type	pdf	2012-10-23
NXP_RF_manual_19th_edition	RF Manual 19th edition: Application and design manual for High Performance RF products May 2015	Other type	pdf	2015-05-19
sot1275-1_po	plastic earless flanged cavity package; 6 leads	Outline drawing	pdf	2013-04-23

订购信息

型号	订购码 (12NC)	可订购的器件编号
BLC8G27LS-60AV	9340 692 59518	BLC8G27LS-60AVY
BLC8G27LS-60AV	9340 692 59517	BLC8G27LS-60AVZ

Power LDMOS transistor BLC8G27LS-60AV

Mounting and Soldering of RF transistors aerospace_defense

Enabling the Mobile Experience rf

Gen8: the latest LDMOS RF power portfolio for wireless infrastructures base_stations

Fatigue in aluminum bond wires gan_devices

Factsheet Gen8 LDMOS RF power transistor with Video Bandwidth BLF8G38LS-75V

RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf

plastic earless flanged cavity package; 6 leads BLC9G27LS-150AV

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