恩智浦提供用于基站的完整的RF功率晶体管产品系列，工作频率从400 MHz至3.8 GHz，涵盖了所有移动通信技术（GSM/EDGE、CDMA、TD-SCDMA、W-CDMA/UMTS、LTE和WiMAX）。
| 产品型号 | 描述 | 产品状态 |
|---|---|---|
| BLC8G20LS-310AV | Power LDMOS transistor | Production |
| BLC8G20LS-400AV | Power LDMOS transistor | Production |
| BLC8G21LS-160AV | LDMOS功率晶体管 | Production |
| BLC8G22LS-450AV | LDMOS功率晶体管 | Production |
| BLC8G24LS-240AV | LDMOS功率晶体管 | Production |
| BLC8G27LS-100AV | LDMOS功率晶体管 | Production |
| BLC8G27LS-140AV | LDMOS功率晶体管 | Production |
| BLC8G27LS-160AV | 功率LDMOS晶体管 | Production |
| BLC8G27LS-180AV | LDMOS功率晶体管 | Production |
| BLC8G27LS-210PV | LDMOS功率晶体管 | Production |
| BLC8G27LS-240AV | 功率LDMOS晶体管 | Production |
| BLC8G27LS-245AV | LDMOS功率晶体管 | Production |
| BLC8G27LS-60AV | Power LDMOS transistor | Development |
| BLC9G20LS-120V | Power LDMOS transistor | Development |
| BLC9G27LS-150AV | LDMOS功率晶体管 | Production |
| BLF6G10(LS)-200RN | 功率LDMOS晶体管 | Production |
| BLF6G10-45 | 功率LDMOS晶体管 | Production |
| BLF6G10L(S)-260PRN | 功率LDMOS晶体管 | Production |
| BLF6G10L-40BRN | 功率LDMOS晶体管 | Production |
| BLF6G10LS-135RN | 功率LDMOS晶体管 | Production |
| BLF6G15L(S)-40RN | 功率LDMOS晶体管 | Production |
| BLF6G15L-250PBRN | 功率LDMOS晶体管 | Production |
| BLF6G15L-40BRN | 功率LDMOS晶体管 | Production |
| BLF6G15LS-250PBRN | 功率LDMOS晶体管 | Production |
| BLF6G20(LS)-110 | 功率LDMOS晶体管 | Production |
| BLF6G20LS-140 | 功率LDMOS晶体管 | Production |
| BLF6G21-10G | 功率LDMOS晶体管 | Production |
| BLF6G22L(S)-40P | 功率LDMOS晶体管 | Production |
| BLF6G22LS-100 | 功率LDMOS晶体管 | Production |
| BLF6G22LS-130 | 功率LDMOS晶体管 | Production |
| BLF6G27(S)-45 | WiMAX功率LDMOS晶体管 | Production |
| BLF6G27-10(G) | WiMAX功率LDMOS晶体管 | Production |
| BLF6G27L(S)-40P(G) | LDMOS功率晶体管 | Production |
| BLF6G27L-50BN | 功率LDMOS晶体管 | Production |
| BLF6G38(LS)-100 | WiMAX功率LDMOS晶体管 | Production |
| BLF6G38(LS)-50 | WiMAX功率LDMOS晶体管 | Production |
| BLF6G38(S)-25 | WiMAX功率LDMOS晶体管 | Production |
| BLF6G38-10G | WiMAX功率LDMOS晶体管 | Production |
| BLF6H10L(S)-160 | 功率LDMOS晶体管 | Production |
| BLF7G10L(S)-250 | 功率LDMOS晶体管 | Production |
| BLF7G15LS-200 | 功率LDMOS晶体管 | Production |
| BLF7G15LS-300P | 功率LDMOS晶体管 | Production |
| BLF7G20L(S)-200 | 功率LDMOS晶体管 | Production |
| BLF7G20L(S)-250P | 功率LDMOS晶体管 | Production |
| BLF7G20L(S)-90P | 功率LDMOS晶体管 | Production |
| BLF7G20LS-140P | 功率LDMOS晶体管 | Production |
| BLF7G21L(S)-160P | LDMOS功率晶体管 | Production |
| BLF7G21LS-160 | LDMOS功率晶体管 | Production |
| BLF7G22L(S)-130 | 功率LDMOS晶体管 | Production |
| BLF7G22L(S)-160 | 功率LDMOS晶体管 | Production |
| BLF7G22L(S)-200 | LDMOS功率晶体管 | Production |
| BLF7G22L(S)-250P | LDMOS功率晶体管 | Production |
| BLF7G24L(S)-100 | 功率LDMOS晶体管 | Production |
| BLF7G24L(S)-140 | 功率LDMOS晶体管 | Production |
| BLF7G24L(S)-160P | 功率LDMOS晶体管 | Production |
| BLF7G27L(S)-100 | LDMOS功率晶体管 | Production |
| BLF7G27L(S)-140 | 功率LDMOS晶体管 | Production |
| BLF7G27L(S)-150P | 功率LDMOS晶体管 | Production |
| BLF7G27L(S)-75P | 功率LDMOS晶体管 | Production |
| BLF7G27L(S)-90P | 功率LDMOS晶体管 | Production |
| BLF7G27L-200PB | 功率LDMOS晶体管 | Production |
| BLF8G09LS-270(G)W | 功率LDMOS晶体管 | Production |
| BLF8G09LS-400P(G)W | 功率LDMOS晶体管 | Production |
| BLF8G10L(S)-160 | 功率LDMOS晶体管 | Production |
| BLF8G10LS-160V | 功率LDMOS晶体管 | Production |
| BLF8G10LS-270 | 功率LDMOS晶体管 | Production |
| BLF8G10LS-270(G)V | 功率LDMOS晶体管 | Production |
| BLF8G10LS-300P | 功率LDMOS晶体管 | Production |
| BLF8G19LS-170BV | 功率LDMOS晶体管 | Production |
| BLF8G20LS-140(G)V | Power LDMOS transistor | Production |
| BLF8G20LS-160V | Power LDMOS transistor | Production |
| BLF8G20LS-200V | 功率LDMOS晶体管 | Production |
| BLF8G20LS-220 | 功率LDMOS晶体管 | Production |
| BLF8G20LS-230V | 功率LDMOS晶体管 | Production |
| BLF8G20LS-260A | 功率LDMOS晶体管 | Production |
| BLF8G20LS-400P(G)V | 功率LDMOS晶体管 | Production |
| BLF8G22LS-140 | 功率LDMOS晶体管 | Production |
| BLF8G22LS-160BV | 功率LDMOS晶体管 | Production |
| BLF8G22LS-200(G)V | 功率LDMOS晶体管 | Production |
| BLF8G22LS-205V | Power LDMOS transistor | Qualification |
| BLF8G22LS-220 | 功率LDMOS晶体管 | Production |
| BLF8G22LS-240 | 功率LDMOS晶体管 | Production |
| BLF8G22LS-270 | 功率LDMOS晶体管 | Production |
| BLF8G22LS-270(G)V | 功率LDMOS晶体管 | Production |
| BLF8G24L(S)-200P | 功率LDMOS晶体管 | Production |
| BLF8G24LS-100(G)V | 功率LDMOS晶体管 | Production |
| BLF8G24LS-150(G)V | 功率LDMOS晶体管 | Production |
| BLF8G24LS-200PN | LDMOS功率晶体管 | Production |
| BLF8G27LS-100 | LDMOS功率晶体管 | Production |
| BLF8G27LS-100(G)V | 功率LDMOS晶体管 | Production |
| BLF8G27LS-100P | 功率LDMOS晶体管 | Production |
| BLF8G27LS-140 | 功率LDMOS晶体管 | Production |
| BLF8G27LS-140V | 功率LDMOS晶体管 | Production |
| BLF8G27LS-150(G)V | 功率LDMOS晶体管 | Production |
| BLF8G38LS-75V | 功率LDMOS晶体管 | Production |
| BLF9G20LS-160V | Power LDMOS transistor | Production |
| BLF9G38LS-90P | Power LDMOS transistor | Production |
| BLM6G22-30(G) | W-CDMA 2100 MHz至2200 MHz功率MMIC | Production |
| BLM7G1822S-20PB(G) | LDMOS 2级功率MMIC | Production |
| BLM7G1822S-40AB(G) | LDMOS 2-stage power MMIC | Production |
| BLM7G1822S-40PB(G) | LDMOS 2级功率MMIC | Production |
| BLM7G1822S-80AB(G) | LDMOS 2级功率MMIC | Production |
| BLM7G22S-60PB(G) | LDMOS 2级功率MMIC | Production |
| BLM7G24S-30BG | LDMOS 2级功率MMIC | Production |
| BLM8G0710S-15PB(G) | LDMOS 2-stage power MMIC | Qualification |
| BLM8G0710S-30PB(G) | LDMOS 2-stage power MMIC | Production |
| BLM8G0710S-45AB | LDMOS 2-stage power MMIC | Development |
| BLM8G0710S-45ABG | LDMOS 2-stage power MMIC | Development |
| BLP7G07S-140P | 功率LDMOS晶体管 | Production |
| BLP7G22-05 | LDMOS驱动器晶体管 | Production |
| BLP7G22-10 | LDMOS驱动器晶体管 | Production |
| BLP8G10S-270PW | Power LDMOS transistor | Development |
| BLP8G10S-45P(G) | 功率LDMOS晶体管 | Production |
| BLP8G20S-80P | LDMOS功率晶体管 | Production |
| BLP8G21S-160PV | 功率LDMOS晶体管 | Production |
| BLP8G27-10 | Power LDMOS transistor | Qualification |
| BLP8G27-5 | Power LDMOS transistor | Qualification |
