BLF7G24L(S)-140:功率LDMOS晶体管

140 W LDMOS功率晶体管,适用于2300 MHz至2400 MHz频率范围的基站应用。

特性和优势
    • 高效率
    • 集成ESD保护
    • 低记忆效应,提供极佳数字预失真能力
    • 内部匹配以方便使用
    • 极佳的强度
    • 低Rth提供极佳的热稳定性
    • 符合有害物质限制的Directive 2002/95/EC
应用
    • 基站RF功率放大器
    • 2300 MHz 至2400 MHz频率范围内的多载波应用
产品图片
关键参数
型号Package versionfrange [min] (MHz)frange [max] (MHz)PL(1dB) (W)VDS (V)η (%)GP (dB)Test signalProduct status
BLF7G24LS-140SOT502B230024001402826.518.5NCDMA/IS95; NCDMA/IS95Production
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BLF7G24LS-140

(SOT502B)
sot502b_poReel 13" Q1/T1量产Standard MarkingBLF7G24LS-140,118( 9340 649 95118 )
Bulk Pack量产Standard MarkingBLF7G24LS-140,112( 9340 649 95112 )
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BLF7G24LS-140BLF7G24LS-140,118Always Pb-freeNANA
BLF7G24LS-140BLF7G24LS-140,112Always Pb-freeNANA
文档资料
档案名称标题类型格式日期
BLF7G24L-140_7G24LS-140 (中文)Power LDMOS transistorData sheetpdf2011-08-01
AN10896Mounting and Soldering of RF transistorsApplication notepdf2015-03-24
75017347Enabling the Mobile ExperienceBrochurepdf2013-02-05
75017200RF power transistors for leading LTE basestation performance at 2.3 to 2.4 GHzLeafletpdf2011-12-01
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
NXP_RF_manual_19th_editionRF Manual 19th edition: Application and design manual for High Performance RF products May 2015Other typepdf2015-05-19
BLF7G24L-140_ADS-2009_ModelBLF7G24L-140 ADS-2009 ModelSimulation modelzip2013-02-28
sot502b_poearless flanged ceramic package; 2 leadsOutline drawingpdf2007-05-08
SOT502B_112CDFM2; blister pack; standard product orientation 12NC ending 112Packingpdf2012-12-03
订购信息
型号订购码 (12NC)可订购的器件编号
BLF7G24LS-1409340 649 95118BLF7G24LS-140,118
BLF7G24LS-1409340 649 95112BLF7G24LS-140,112
模型
标题类型日期
BLF7G24L-140 ADS-2009 ModelSimulation model2013-02-28
Power LDMOS transistor BLF7G24L_S_140
Power LDMOS transistor BLF7G24L_S_140
Power LDMOS transistor BLF7G24L_S_140
Mounting and Soldering of RF transistors aerospace_defense
Enabling the Mobile Experience rf
RF power transistors for leading LTE basestation performance at 2.3 to 2.4 GHz BLF7G24L_S_140
Fatigue in aluminum bond wires gan_devices
RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
earless flanged ceramic package; 2 leads BLS7G3135LS-200
CDFM2; blister pack; standard product orientation 12NC ending 112 BLS7G3135LS-200
BLF7G24L-140 ADS-2009 Model BLF7G24L_S_140