BLF8G20LS-140(G)V:Power LDMOS transistor

140 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz.

特性和优势
    • Excellent ruggedness
    • High efficiency
    • Low thermal resistance providing excellent thermal stability
    • Decoupling leads to enable improved video bandwidth (150 MHz typical)
    • Designed for broadband operation (1805 MHz to 1990 MHz)
    • Lower output capacitance for improved performance in Doherty applications
    • Designed for low memory effects providing excellent pre-distortability
    • Internally matched for ease of use
    • Integrated ESD protection
    • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
应用
    • RF power amplifiers for base stations and multi carrier applications in the 1805 MHz to 1990 MHz frequency range
产品图片
关键参数
型号Package versionfrange [min] (MHz)frange [max] (MHz)PL(1dB) (W)VDS (V)η (%)GP (dB)Test signalProduct status
BLF8G20LS-140GVSOT1244C18051990140283218.52-c WCDMA; 2-c WCDMAProduction
BLF8G20LS-140VSOT1244B18051990140283218.52-c WCDMA; 2-c WCDMAProduction
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BLF8G20LS-140GV
CDFM6
(SOT1244C)
sot1244c_poHorizontal, Rail Pack量产Standard MarkingBLF8G20LS-140GVQ( 9340 683 05127 )
Reel 13" Q1/T1量产Standard MarkingBLF8G20LS-140GVJ( 9340 683 05118 )
BLF8G20LS-140V
CDFM6
(SOT1244B)
sot1244b_poReel 13" Q1/T1量产Standard MarkingBLF8G20LS-140VJ( 9340 683 06118 )
Bulk Pack量产Standard MarkingBLF8G20LS-140VU( 9340 683 06112 )
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BLF8G20LS-140GVBLF8G20LS-140GVQAlways Pb-free11
BLF8G20LS-140GVBLF8G20LS-140GVJAlways Pb-free11
BLF8G20LS-140VBLF8G20LS-140VJAlways Pb-free11
BLF8G20LS-140VBLF8G20LS-140VUAlways Pb-free11
文档资料
档案名称标题类型格式日期
BLF8G20LS-140V_20LS-140GV (中文)Power LDMOS transistorData sheetpdf2014-10-07
AN10896Mounting and Soldering of RF transistorsApplication notepdf2015-03-24
75017347Enabling the Mobile ExperienceBrochurepdf2013-02-05
PCB_Design_BLF8G20LS-140V_20LS-140GV_Data-sheetPCB Design BLF8G20LS-140(G)V (Data sheet)Design supportzip2014-10-09
75017604Gen8: the latest LDMOS RF power portfolio for wireless infrastructuresLeafletpdf2014-09-04
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
Factsheet_Gen8_LDMOS_RF_pt_with_VBWFactsheet Gen8 LDMOS RF power transistor with Video BandwidthOther typepdf2012-10-23
NXP_RF_manual_19th_editionRF Manual 19th edition: Application and design manual for High Performance RF products May 2015Other typepdf2015-05-19
sot1244b_poearless flanged ceramic package; 6 leadsOutline drawingpdf2012-05-15
sot1244c_poearless flanged ceramic package; 6 leadsOutline drawingpdf2012-05-14
订购信息
型号订购码 (12NC)可订购的器件编号
BLF8G20LS-140GV9340 683 05127BLF8G20LS-140GVQ
BLF8G20LS-140GV9340 683 05118BLF8G20LS-140GVJ
BLF8G20LS-140V9340 683 06118BLF8G20LS-140VJ
BLF8G20LS-140V9340 683 06112BLF8G20LS-140VU
其它
标题类型日期
PCB Design BLF8G20LS-140(G)V (Data sheet)Design support2014-10-09
Power LDMOS transistor BLF8G20LS_140_G_V
Power LDMOS transistor BLF8G20LS_140_G_V
Power LDMOS transistor BLF8G20LS_140_G_V
Mounting and Soldering of RF transistors aerospace_defense
Enabling the Mobile Experience rf
Gen8: the latest LDMOS RF power portfolio for wireless infrastructures base_stations
Fatigue in aluminum bond wires gan_devices
Factsheet Gen8 LDMOS RF power transistor with Video Bandwidth BLF8G38LS-75V
RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
earless flanged ceramic package; 6 leads BLF8G27LS_150_G_V
earless flanged ceramic package; 6 leads BLF8G27LS_150_G_V
PCB Design BLF8G20LS-140(G)V (Data sheet) BLF8G20LS_140_G_V