BLF9G20LS-160V：Power LDMOS transistor _ BDTIC 中国领先电子元器件代理商

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BLF9G20LS-160V：Power LDMOS transistor

160 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz.

特性和优势

Excellent ruggedness
High efficiency
Low thermal resistance providing excellent thermal stability
Designed for broadband operation
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

应用

RF power amplifier for multi systems base stations and multi carrier applications in the 1800 MHz to 2000 MHz frequency range

产品图片

关键参数

Symbol	Parameter	Conditions	Min	Typ/Nom	Max	Unit
f_range	frequency range		1800		2000	MHz
P_L(1dB)	nominal output power at 1 dB gain compression			160		W
G_p	power gain	P_L(AV) = 35.5 W; V_DS = 28 V	18.8	19.8		dB
RL_in	input return loss	P_L(AV) = 35.5 W; V_DS = 28 V; I_Dq = 800 mA		-8	-4	dB
η_D	drain efficiency	P_L(AV) = 35.5 W; V_DS = 28 V; 1805 MHz ≤ f ≤ 1880 MHz; I_Dq = 800 mA	28.5	33.5		%
ACPR	adjacent channel power ratio	P_L(AV) = 35.5 W; V_DS = 28 V; 1805 MHz ≤ f ≤ 1880 MHz; I_Dq = 800 mA		-28	-23	dBc

封装与包装

型号	封装	Outline version	Reflow-/Wave soldering	包装	产品状态	标示	可订购的器件编号, (订购码 (12NC))
BLF9G20LS-160V	CDFM6 (SOT1120B)	sot1120b_po		Reel 13" Q1/T1	量产	Standard Marking	BLF9G20LS-160VJ( 9340 691 03118 )
BLF9G20LS-160V	CDFM6 (SOT1120B)	sot1120b_po		Bulk Pack	量产	Standard Marking	BLF9G20LS-160VU( 9340 691 03112 )

引脚配置信息

Pin	Symbol	Description	外形简图	图形符号
1	D	drain
2	G	gate
3	S	source
4	DL	decoupling lead
5	DL	decoupling lead
6	n.c.	not connected
7	n.c.	not connected

无铅环保信息

型号	可订购的器件编号	RoHS / RHF	无铅转换日期	潮湿敏感度等级	MSL LF
BLF9G20LS-160V	BLF9G20LS-160VJ		Always Pb-free	NA	NA
BLF9G20LS-160V	BLF9G20LS-160VU		Always Pb-free	NA	NA

文档资料

档案名称	标题	类型	格式	日期
BLF9G20LS-160V (中文)	Power LDMOS transistor	Data sheet	pdf	2015-05-21
AN10896	Mounting and Soldering of RF transistors	Application note	pdf	2015-03-24
75017347	Enabling the Mobile Experience	Brochure	pdf	2013-02-05
PCB_Design_BLF9G20LS-160V_Data-sheet	PCB Design BLF9G20LS-160V (Data sheet)	Design support	zip	2015-05-18
fatigue_in_aluminum_bond_wires	Fatigue in aluminum bond wires	Mounting and soldering	pdf	2009-10-08
NXP_RF_manual_19th_edition	RF Manual 19th edition: Application and design manual for High Performance RF products May 2015	Other type	pdf	2015-05-19
sot1120b_po	earless flanged LDMOST ceramic package; 6 leads	Outline drawing	pdf	2012-06-15

订购信息

型号	订购码 (12NC)	可订购的器件编号
BLF9G20LS-160V	9340 691 03118	BLF9G20LS-160VJ
BLF9G20LS-160V	9340 691 03112	BLF9G20LS-160VU

其它

标题	类型	日期
PCB Design BLF9G20LS-160V (Data sheet)	Design support	2015-05-18

Power LDMOS transistor BLF9G20LS-160V

Mounting and Soldering of RF transistors aerospace_defense

Enabling the Mobile Experience rf

Fatigue in aluminum bond wires gan_devices

RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf

earless flanged LDMOST ceramic package; 6 leads BLF9G20LS-160V

PCB Design BLF9G20LS-160V (Data sheet) BLF9G20LS-160V

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