BLF8G27LS-100:LDMOS功率晶体管

视频带宽改善型100 W LDMOS功率晶体管,适用于2500 MHz至2700 MHz频率范围的基站应用。

特性和优势
    • 出色的耐用性
    • 高效
    • 低热阻,提供极佳的热稳定性
    • 专为宽带应用设计(2500 MHz至2700 MHz)
    • 更低的输出电容提升了Doherty应用的性能
    • 专为低内存占用量设计,提供极佳的预失真性能
    • 内部匹配,便于使用
    • 集成ESD保护
    • 符合欧盟2002/95/EC危害性物质限制(RoHS)指令
应用
    • RF功率放大器,适合于2500 MHz至2700 MHz频率范围内的基站和多载波应用
产品图片
关键参数
SymbolParameterConditionsMinTyp/NomMaxUnit
frangefrequency range25002700MHz
PL(1dB)nominal output power at 1 dB gain compression100W
Gppower gainPL(AV) = 25 W; VDS = 28 V15.817dB
RLininput return lossPL(AV) = 25 W; VDS = 28 V; IDq = 900 mA-12-8dB
ηDdrain efficiencyPL(AV) = 25 W; VDS = 28 V; 2500 MHz < f < 2700 MHz; IDq = 900 mA2328%
ACPR5Madjacent channel power ratio (5 MHz)PL(AV) = 25 W; VDS = 28 V; 2500 MHz < f < 2700 MHz; IDq = 900 mA-32-27dBc
封装与包装
型号封装Outline versionReflow-/Wave soldering包装产品状态标示可订购的器件编号, (订购码 (12NC))
BLF8G27LS-100

(SOT502B)
sot502b_poReel 13" Q1/T1量产Standard MarkingBLF8G27LS-100J( 9340 683 13118 )
Bulk Pack量产Standard MarkingBLF8G27LS-100U( 9340 683 13112 )
引脚配置信息
PinSymbolDescription外形简图图形符号
1Ddrain
2Ggate
3Ssource
无铅环保信息
型号可订购的器件编号RoHS / RHF无铅转换日期潮湿敏感度等级MSL LF
BLF8G27LS-100BLF8G27LS-100JAlways Pb-free11
BLF8G27LS-100BLF8G27LS-100UAlways Pb-free11
文档资料
档案名称标题类型格式日期
BLF8G27LS-100 (中文)Power LDMOS transistorData sheetpdf2014-03-05
AN10896Mounting and Soldering of RF transistorsApplication notepdf2015-03-24
75017347Enabling the Mobile ExperienceBrochurepdf2013-02-05
PCB_Design_BLF8G27LS-100_Data-sheetPCB Design BLF8G27LS-100 (Data sheet)Design supportzip2014-01-31
75017604Gen8: the latest LDMOS RF power portfolio for wireless infrastructuresLeafletpdf2014-09-04
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
NXP_RF_manual_19th_editionRF Manual 19th edition: Application and design manual for High Performance RF products May 2015Other typepdf2015-05-19
BLF8G27LS-100_ADS-2009_ModelBLF8G27LS-100 ADS-2009 ModelSimulation modelzip2013-12-17
sot502b_poearless flanged ceramic package; 2 leadsOutline drawingpdf2007-05-08
SOT502B_112CDFM2; blister pack; standard product orientation 12NC ending 112Packingpdf2012-12-03
订购信息
型号订购码 (12NC)可订购的器件编号
BLF8G27LS-1009340 683 13118BLF8G27LS-100J
BLF8G27LS-1009340 683 13112BLF8G27LS-100U
模型
标题类型日期
BLF8G27LS-100 ADS-2009 ModelSimulation model2013-12-17
其它
标题类型日期
PCB Design BLF8G27LS-100 (Data sheet)Design support2014-01-31
Power LDMOS transistor BLF8G27LS-100
Mounting and Soldering of RF transistors aerospace_defense
Enabling the Mobile Experience rf
Gen8: the latest LDMOS RF power portfolio for wireless infrastructures base_stations
Fatigue in aluminum bond wires gan_devices
RF Manual 19th edition: Application and design manual for High Performance RF products May 2015 rf
earless flanged ceramic package; 2 leads BLS7G3135LS-200
CDFM2; blister pack; standard product orientation 12NC ending 112 BLS7G3135LS-200
BLF8G27LS-100 ADS-2009 Model BLF8G27LS-100
PCB Design BLF8G27LS-100 (Data sheet) BLF8G27LS-100